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Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. LDN9926ET1G Dual N Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 6A, RDS ON = 29mΩ @VGS = 4.5V. N). RDS(ON) = 42mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(O High power and current handing capability.	Original	LDN9926ET1G	PDF

Catalog Datasheet

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Untitled

Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. LDN9926ET1G Dual N Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 6A, RDS ON = 29mΩ @VGS = 4.5V. N). RDS(ON) = 42mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(O High power and current handing capability.

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LDN9926ET1G

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