L2SC3356LT1 Search Results

L2SC3356LT1 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
L2SC3356LT1		Leshan Radio Company	High-Frequency Amplifier Transistor		Original	PDF
L2SC3356LT1G		Leshan Radio Company	High-Frequency Amplifier Transistor		Original	PDF

L2SC3356LT1 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
L2SC3356LT1G Contextual Info: DATA SHEET LESHAN RADIO COMPANY, LTD. L2SC3356LT1G S-L2SC3356LT1G DESCRIPTION The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. S- Prefix for Automotive and Other Applications Requiring Unique Site	Original	L2SC3356LT1G S-L2SC3356LT1G L2SC3356LT1 AEC-Q101 L2SC3356LT3G S-L2SC3356LT3G OT-23 3000/Tape L2SC3356LT1G	PDF
Contextual Info: DATA SHEET LESHAN RADIO COMPANY, LTD. DESCRIPTION L2SC3356LT1G The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. 3 It has dynamic range and good current characteristic. ORDERING INFORMATION Device	Original	L2SC3356LT1G L2SC3356LT1 L2SC3356LT3G OT-23 3000/Tape 10000/Tape	PDF
Contextual Info: DATA SHEET LESHAN RADIO COMPANY, LTD. DESCRIPTION L2SC3356LT1G The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. 3 It has dynamic range and good current characteristic. ORDERING INFORMATION Device	Original	L2SC3356LT1G L2SC3356LT1 L2SC3356LT3G OT-23 3000/Tape 10000/Tape	PDF
NF 723 Abstract: L2SC3356LT1 L2SC3356LT1G L2SC3356LT3G Contextual Info: DATA SHEET LESHAN RADIO COMPANY, LTD. DESCRIPTION L2SC3356LT1G The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. 3 It has dynamic range and good current characteristic. ORDERING INFORMATION Device	Original	L2SC3356LT1G L2SC3356LT1 L2SC3356LT3G OT-23 3000/Tape 10000/Tape 195mm 150mm NF 723 L2SC3356LT1G L2SC3356LT3G	PDF
L2SC3356LT1 Abstract: L2SC3356LT1G L2SC3356LT3G transistor 20 dB Contextual Info: DATA SHEET LESHAN RADIO COMPANY, LTD. DESCRIPTION L2SC3356LT1G The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. 3 It has dynamic range and good current characteristic. ORDERING INFORMATION Device	Original	L2SC3356LT1G L2SC3356LT1 L2SC3356LT3G OT-23 3000/Tape 10000/Tape L2SC3356LT1G L2SC3356LT3G transistor 20 dB	PDF
R24 marking DATASHEET Abstract: L2SC3356LT1 Contextual Info: DATA SHEET LESHAN RADIO COMPANY, LTD. L2SC3356LT1 3 1 DESCRIPTION 2 The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for SOT-23 low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. FEATURES • Low Noise and High Gain	Original	L2SC3356LT1 L2SC3356LT1 OT-23 L2SC3356LT1-4/4 R24 marking DATASHEET	PDF
2x062h Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062 Contextual Info: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1	Original	ZMM22 ZMM24 ZMM27 ZMM43 ZMM47 2x062h gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062	PDF