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    L2821 Search Results

    L2821 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ISL28213FBZ-T13 Renesas Electronics Corporation Dual General Purpose Micropower, RRIO Operational Amplifier Visit Renesas Electronics Corporation
    ISL28213FUZ-T7 Renesas Electronics Corporation Dual General Purpose Micropower, RRIO Operational Amplifier Visit Renesas Electronics Corporation
    ISL28210FBZ-T13 Renesas Electronics Corporation Precision Low Noise JFET Operational Amplifiers Visit Renesas Electronics Corporation
    ISL28214FUZ-T7 Renesas Electronics Corporation Dual General Purpose Micropower, RRIO Operational Amplifiers Visit Renesas Electronics Corporation
    ISL28217FBBZ Renesas Electronics Corporation 40V Precision Low Power Operational Amplifiers Visit Renesas Electronics Corporation
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    L2821 Price and Stock

    Renesas Electronics Corporation ISL28213FUZ

    IC OPAMP GP 2 CIRCUIT 8MSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ISL28213FUZ Tube 4,668 1
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    Mouser Electronics ISL28213FUZ 20,813
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    • 100 $0.498
    • 1000 $0.339
    • 10000 $0.275
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    Avnet Silica ISL28213FUZ 20 Weeks 50
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    Renesas Electronics America ISL28213FUZ Tube 4,668 1
    • 1 $0.8
    • 10 $0.7
    • 100 $0.5366
    • 1000 $0.33936
    • 10000 $0.28634
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    Renesas Electronics Corporation ISL28213FBZ

    IC OPAMP GP 2 CIRCUIT 8SOIC
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    DigiKey ISL28213FBZ Tube 2,979 1
    • 1 $1.24
    • 10 $0.781
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    Mouser Electronics ISL28213FBZ 1,577
    • 1 $0.8
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    Avnet Silica ISL28213FBZ 20 Weeks 97
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    Flip Electronics ISL28213FBZ 64,990
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    Renesas Electronics America ISL28213FBZ Tube 2,979 1
    • 1 $1.24
    • 10 $0.781
    • 100 $0.52021
    • 1000 $0.39918
    • 10000 $0.31215
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    Renesas Electronics Corporation ISL28214FBZ

    IC OPAMP GP 2 CIRCUIT 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ISL28214FBZ Tube 1,953 3,880
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    • 10000 $0.68188
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    Mouser Electronics ISL28214FBZ 3,630
    • 1 $1.3
    • 10 $1.11
    • 100 $0.748
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    Renesas Electronics America ISL28214FBZ Tube 1,953 3,880
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    • 10000 $0.68188
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    Renesas Electronics Corporation ISL28217FUZ

    IC OPAMP GP 2 CIRCUIT 8MSOP
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    DigiKey ISL28217FUZ Tube 678 800
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    • 1000 $2.42773
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    Mouser Electronics ISL28217FUZ 700
    • 1 $4.7
    • 10 $4
    • 100 $3.46
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    Flip Electronics ISL28217FUZ 1,545
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    Renesas Electronics America ISL28217FUZ Tube 678 800
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    • 1000 $2.42773
    • 10000 $2.42773
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    Renesas Electronics Corporation ISL28210FBZ

    IC OPAMP JFET 2 CIRCUIT 8SOIC
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    DigiKey ISL28210FBZ Tube 661 1
    • 1 $5.38
    • 10 $4.832
    • 100 $5.38
    • 1000 $3.36997
    • 10000 $2.70003
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    Mouser Electronics ISL28210FBZ 616
    • 1 $5.37
    • 10 $4.83
    • 100 $3.95
    • 1000 $3.36
    • 10000 $2.69
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    Flip Electronics ISL28210FBZ 873
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    Renesas Electronics America ISL28210FBZ Tube 661 1
    • 1 $5.38
    • 10 $4.832
    • 100 $3.95866
    • 1000 $3.36997
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    Find more L2821 price and stock on Findchips.com

    L2821 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    L2821 Polyfet RF Devices SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR Original PDF

    L2821 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    L2821

    Abstract: No abstract text available
    Text: polyfet rf devices L2821 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original     		PDF L2821 L2821

    TB146

    Abstract: L2821 Z4 51
    Text: TB-146 Pin vs Pout Freq=850MHz Vds=12.5Vdc Idq=.4A 8 12.0 P1dB=4W 6 Pout 11.0 Gain 10.0 4 2 Efficiency = 45% 9.0 0.2 0.4 0.6 0.8 1 Pin in Watts TB146, L2821; Vds=12.5Vdc Idq=.8A, 850MHz -27 -31 -35 -39 -43 -47 -51 -55 -59 -63 -67 -71 -75 3rd Order 5th Order


    Original     		PDF TB-146 850MHz TB146, L2821; 850MHz 450in 325in, 070in 050in, TB146 L2821 Z4 51

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices L2821 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original     		PDF L2821

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices L2821 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original     		PDF L2821

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices L2821 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original     		PDF L2821

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices L2821 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE


    Original     		PDF L2821

    b16 zener

    Abstract: zener diode c5 C61NF transistor Z2 zener c2 10KPOT 20pf B16 diode C710 zener z2
    Text: RFin C1 7.5PF 1 3 turns C2 20PF L1 22AWG 2 C31NF 3 Gendiode R6 10K 10KPot 1/2turn L2 22AWG 16 14 Zener Gendiode 15 4 8 12 L2821 R1180 5 9 22ohm 1/2W R43.9K 7 6 C61NF 4/10/01 C5 9.1PF 1/2turn L322AWG 22AWG 12turns C710NF 850mu terroid C847UF,25V C4 10NF 11


    Original     		PDF 22AWG C31NF 10KPot L2821 R1180 22ohm C61NF L322AWG b16 zener zener diode c5 C61NF transistor Z2 zener c2 10KPOT 20pf B16 diode C710 zener z2

    L2821

    Abstract: No abstract text available
    Text: polyfet rf devices L2821 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE


    Original     		PDF L2821 L2821

    MGCF21

    Abstract: LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet
    Text: polyfet rf devices LDMOS Flanged Mount Pout Freq Gain theta 28 Volt LDMOS gm Idsat Ciss Crss Coss mho A polyfet rf devices Broad Band RF Power MOSFET LDMOS Transistors Surface Mount Pout Freq Gain theta 12.5 Volt VDMOS S Series gm Idsat Ciss Crss Coss Flanged Mount


    Original     		PDF L8821P LB421 L8821P LP721 SM341 LQ821 SQ701 SR401 MGCF21 LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet

    rf push pull mosfet power amplifier

    Abstract: 100 watt hf mosfet 12 volt 150w amplifier RF VHF 139 144 mhz uhf 150w mosfet 150w amplifier RF VHF 139 - 144 mhz LDMOS 15w ldmos l2711 vhf LP801 LK602 LR941
    Text: polyfet rf devices Broad Band RF Power MOSFET Transistors TB# 178 179 180 181 182 183D 184 185 186 187 188 189 191 192 193A 194 195 196 197 199 200NUM1 201 202 203 204 205 206 207 208 210 211 212 Freq Range 136-174 30-88 50-88 118-165 100-500 1.5-30 1.5-30


    Original     		PDF 200NUM1 SQ221 LK822 LK722 LX521 rf push pull mosfet power amplifier 100 watt hf mosfet 12 volt 150w amplifier RF VHF 139 144 mhz uhf 150w mosfet 150w amplifier RF VHF 139 - 144 mhz LDMOS 15w ldmos l2711 vhf LP801 LK602 LR941