Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTA1517S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES 2001. 2. 24 Revision No : 3 1/3
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KTA1517S
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KTA1517S
Abstract: KTC3911S
Text: SEMICONDUCTOR KTA1517S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES ᴌHigh Voltage : VCEO=-120V. E B L L DIM A B C D E G H J K L M N P ᴌExcellent hFE Linearity ᴌHigh hFE: hFE=200ᴕ700. 3 G A 2 D : hFE 0.1mA /hFE(2mA)=0.95(Typ.).
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KTA1517S
-120V.
KTC3911S.
KTA1517S
KTC3911S
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTA1517S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES ・High Voltage : VCEO=-120V. E B L L ・Excellent hFE Linearity ・High hFE: hFE=200～700. D : hFE 0.1mA /hFE(2mA)=0.95(Typ.). 3 G A 2 H ・Low Noise : NF=1dB(Typ.), 10dB(Max.).
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-120V.
KTA1517S
KTC3911S.
-120V,
-10mA,
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marking ACY SOT-23
Abstract: marking ACY KTA1517 mark ACY SOT-23 ACY SOT23 AC marking marking c y
Text: SEMICONDUCTOR KTA1517 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking ACY No. 1 Item Marking Device Mark AC KTA1517 hFE Grade Y Y,G,L * Lot No. 01 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] 2 Description [Note] * Lot No. marking method
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KTA1517
OT-23
marking ACY SOT-23
marking ACY
KTA1517
mark ACY SOT-23
ACY SOT23
AC marking
marking c y
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KTA1517
Abstract: KTC3911S
Text: SEMICONDUCTOR KTA1517 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES High Voltage : VCEO=-120V. E B L L DIM A B C D E G H J K L M N P Excellent hFE Linearity D : hFE 0.1mA /hFE(2mA)=0.95(Typ.). 2 A 3 G High hFE: hFE=200 700.
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KTA1517
-120V.
KTC3911S.
KTA1517
KTC3911S
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTA1517 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES 2006. 2. 16 Revision No : 0 1/3
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KTA1517
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTA1517S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES ・High Voltage : VCEO=-120V. ・Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ・High hFE: hFE=200～700. ・Low Noise : NF=1dB(Typ.), 10dB(Max.).
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KTA1517S
-120V.
KTC3911S.
-120V,
-10mA,
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KTC3911S
Abstract: hFE CLASSIFICATION Marking 24 hFE-200 KTA1517S
Text: SEMICONDUCTOR KTC3911S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES High Voltage : VCEO=120V. E B L L DIM A B C D E G H J K L M N P Excellent hFE Linearity D : hFE 0.1mA /hFE(2mA)=0.95(Typ.). 2 A 3 G High hFE: hFE=200 700.
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KTC3911S
KTA1517S.
KTC3911S
hFE CLASSIFICATION Marking 24
hFE-200
KTA1517S
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alternator diode 1776 B
Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)
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Hig86-755-3679515
alternator diode 1776 B
2az marking transistor sot-23
SMD SOT23 transistor MARK Y2
ic mb4213
NEC 12F triac
F10P048
ktc3114 equivalent
SMD TRANSISTOR MARKING 02N
DIODE PJ 57 ss14
BC517 equivalent
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khb*9D5N20P
Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
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2N2904E
BC859
KDS135S
2N2906E
BC860
KAC3301QN
KDS160
2N3904
BCV71
KDB2151E
khb*9D5N20P
khb9d0n90n
6v Zener diode
khb*2D0N60P
transistor
KHB7D0N65F
BC557 transistor
kia*278R33PI
KHB9D0N90N circuit
ktd998 transistor
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LM8550
Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
Text: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo
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2N2222/A
KTN2222/A
2SA1150
KTA1272
2SA1510
2SB546A
2N2369/A
KTN2369/A
2SA1151
KTA1266
LM8550
KTD2026
2SC2320 equivalent
NEC 12F DATASHEET
2N3904 MOTOROLA
2sc2240 equivalent
2N3906 MOTOROLA
2sc1983
2N5400 MOTOROLA
2SD1960
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KIA78*pI
Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
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2N2904E
BC859
KDS135S
2N2906E
BC860
KAC3301QN
KDS160
2N3904
BCV71
KDB2151E
KIA78*pI
transistor
KIA78*p
TRANSISTOR 2N3904
khb*9D5N20P
khb9d0n90n
KID65004AF
TRANSISTOR mosfet
KIA7812API
khb*2D0N60P
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MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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KF6N60
Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
Text: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION
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USFB053
USFB13
USFB13A
USFB13L
USFB14
USFZ10V
USFZ11V
USFZ12V
USFZ13V
USFZ15V
KF6N60
2SK3850 equivalent
KF9N25
KF7N50
MDF10N65b transistor
PANASONIC ZENER
Kf10n60
KIA278R12PI equivalent
kid65003ap equivalent
kia578r05
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KTC3911S
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC3911S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES ᴌHigh Voltage : VCEO=120V. E B L L DIM A B C D E G H J K L M N P ᴌExcellent hFE Linearity ᴌHigh hFE: hFE=200ᴕ700. 3 G A 2 D : hFE 0.1mA /hFE(2mA)=0.95(Typ.).
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KTC3911S
KTA1517S.
KTC3911S
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KTA1517
Abstract: KTC3911 2.T transistor planar
Text: _ SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTA1517 EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : V ceo = -1 2 0 V . • Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). • High hFE: hFE=200~700.
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KTA1517
-120V.
KTC3911.
270Hz
KTA1517
KTC3911
2.T transistor planar
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KTA1517
Abstract: KTC3911
Text: SEMICONDUCTOR TECHNICAL DATA KTA1517 EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : V ceo = _ 120V . • Excellent Iife Linearity DIM A B C D E G H J K L M N P : h F E 0 .1 m A /h F E (2 m A )= 0 .9 5 (T y p .).
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KTA1517
-120V.
KTC3911.
270Hz
KTA1517
KTC3911
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KTA1517
Abstract: KTC3911
Text: _ SEMICONDUCTOR TECHNICAL DA TA KOREA ELECTRONICS CO.,LTD. KTC3911 EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : Vceo=120V. • Excellent Iife Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). • High Ilfe • hFE=200 ~ 700.
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KTC3911
KTA1517.
270Hz
KTA1517
KTC3911
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KTA1517S
Abstract: KTC3911S UA08
Text: SEMICONDUCTOR TECHNICAL DATA KTC3911S EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : VCeo=120V. • Excellent hFF Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). • High hFE : hFF=200~700. • Low Noise : NF=ldB(Typ.), 10dB(Max.).
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KTC3911S
KTA1517S.
270Hz
KTA1517S
KTC3911S
UA08
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