KM718V989 Search Results

KM718V989 Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
KM718V989-10		Samsung Electronics	Synchronous Pipelined Burst SRAM		Original	PDF
KM718V989-50		Samsung Electronics	Synchronous Pipelined Burst SRAM		Original	PDF
KM718V989-60		Samsung Electronics	Synchronous Pipelined Burst SRAM		Original	PDF
KM718V989-67		Samsung Electronics	Synchronous Pipelined Burst SRAM		Original	PDF
KM718V989-72		Samsung Electronics	Synchronous Pipelined Burst SRAM		Original	PDF

KM718V989 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: KM736V889 KM718V989 256Kx36 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 Initial draft April. 10 . 1998 Preliminary 0.1 Modify DC characteristics Input Leakage Current test Conditions	Original	KM736V889 KM718V989 256Kx36 512Kx18 512Kx18-Bit 130mA 120mA 110mA 100mA	PDF
Untitled Abstract: No abstract text available Text: KM736V889 KM718V989 256Kx36 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 Initial draft April. 10 . 1998 Preliminary 0.1 Modify DC characteristics Input Leakage Current test Conditions	Original	KM736V889 KM718V989 256Kx36 512Kx18 512Kx18-Bit 130mA 120mA 110mA 100mA	PDF
Untitled Abstract: No abstract text available Text: KM736V889 KM718V989 256Kx36 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 Initial draft April. 10 . 1998 Preliminary 0.1 Modify DC characteristics Input Leakage Current test Conditions	Original	KM736V889 KM718V989 256Kx36 512Kx18 512Kx18-Bit 130mA 120mA 110mA 100mA	PDF
Untitled Abstract: No abstract text available Text: KM736V889 KM718V989 256Kx36 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 Initial draft April. 10 . 1998 Preliminary 0.1 Modify DC characteristics Input Leakage Current test Conditions	Original	KM736V889 KM718V989 256Kx36 512Kx18 512Kx18-Bit 130mA 120mA 110mA 100mA	PDF
50REF Abstract: No abstract text available Text: KM736V889 KM718V989 PRELIMINARY 256Kx36 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 Initial draft April. 10 . 1998 Preliminary 0.1 Modify DC characteristics Input Leakage Current test Conditions	Original	KM736V889 KM718V989 256Kx36 512Kx18 512Kx18-Bit 130mA 120mA 110mA 100mA 50REF	PDF
K7A803609B-PC25 Abstract: K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20 Text: SAMSUNG # - Connect pin 14 FT pin to Vss * - Tie down extra four I/Os with resistor K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K6R1016V1C-TC15	Original	K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K7A803609B-PC25 K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20	PDF
Untitled Abstract: No abstract text available Text: KM736V889 KM718V989 PRELIMINARY 256Kx36 & 512Kx18 Synchronous SRAM 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Rev. No. Draft Date History Remark 0.0 Initial draft April. 10 . 1998 Preliminary 0.1 M odify DC characteristics Input Leakage Current test Conditions	OCR Scan	KM736V889 KM718V989 256Kx36 512Kx18 512Kx18-Bit 130mA 120mA 100mA 1024K	PDF
Untitled Abstract: No abstract text available Text: KM736V889 KM718V989 PRELIMINARY 256Kx36 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. 0.0 History Draft Date Initial draft Remark April. 10 . 1998 Preliminary 0.1 M odify DC characteristics Input Leakage Current test Conditions	OCR Scan	KM736V889 KM718V989 256Kx36 512Kx18 512Kx18-Bit -604K 1024K 18ELECTRONICS	PDF