KM688100 Search Results

KM688100 Datasheets (8)

Part	Manufacturer	Description	Datasheet Type	PDF
KM688100LR-10L	Samsung Electronics	1Mx8 bit Low Power and Low Voltage CMOS Static RAM	Original	PDF
KM688100LR-7L	Samsung Electronics	1Mx8 bit Low Power and Low Voltage CMOS Static RAM	Original	PDF
KM688100LRI-10L	Samsung Electronics	1Mx8 bit Low Power and Low Voltage CMOS Static RAM	Original	PDF
KM688100LRI-7L	Samsung Electronics	1Mx8 bit Low Power and Low Voltage CMOS Static RAM	Original	PDF
KM688100LT-10L	Samsung Electronics	1Mx8 bit Low Power and Low Voltage CMOS Static RAM	Original	PDF
KM688100LT-7L	Samsung Electronics	1Mx8 bit Low Power and Low Voltage CMOS Static RAM	Original	PDF
KM688100LTI-10L	Samsung Electronics	1Mx8 bit Low Power and Low Voltage CMOS Static RAM	Original	PDF
KM688100LTI-7L	Samsung Electronics	1Mx8 bit Low Power and Low Voltage CMOS Static RAM	Original	PDF

KM688100 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
cmos static ram 1mx8 5v Abstract: KM688100LR-10L KM688100LR-7L KM688100LT-10L KM688100LT-7L 1Mx8 bit Low Power CMOS Static RAM Text: Preliminary KM688100 Family CMOS SRAM Document Title 1Mx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History 0.0 Initial draft - Dual CS Draft Date Remark June 22, 1999 Advance The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and	Original	PDF	KM688100 cmos static ram 1mx8 5v KM688100LR-10L KM688100LR-7L KM688100LT-10L KM688100LT-7L 1Mx8 bit Low Power CMOS Static RAM
68B10 Abstract: KM688 KM68B1002-8 Text: KM68B1002 BiCMOS SRAM 131,072 WORD x 8 Bit Ultra High-Speed BiCMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time: 8, 9, 1 0 ,1 2 ,15ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.) (CMOS): 10mA (Max.) Operating K M 68B1002J-8:175m A (Max.)	OCR Scan	PDF	KM68B1002 68B1002J-8 68B1002J-9 68B1002J-10 68B1002J-12 68B1002J-15 KM68B1002J 32-SOJ-400 576-bit 68B10 KM688 KM68B1002-8
Untitled Abstract: No abstract text available Text: SAMSUNG ELECTRONICS INC h? E D • 7^4142 KM68B1002 OD17b^l I bb BiCMOS SRAM 131,072 WORD x 8 Bit Ultra High-Speed BiCMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time: 8 ,9 ,1 0 ,1 2 ,15ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.)	OCR Scan	PDF	KM68B1002 OD17b KM68B1002J-8 175mA KM68B1002J-9 KM68B1002J-10 165mA KM68B1002J-12 155mA

Catalog Datasheet

MFG & Type

PDF

Document Tags

cmos static ram 1mx8 5v

Abstract: KM688100LR-10L KM688100LR-7L KM688100LT-10L KM688100LT-7L 1Mx8 bit Low Power CMOS Static RAM
Text: Preliminary KM688100 Family CMOS SRAM Document Title 1Mx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History 0.0 Initial draft - Dual CS Draft Date Remark June 22, 1999 Advance The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

Original

PDF

KM688100 cmos static ram 1mx8 5v KM688100LR-10L KM688100LR-7L KM688100LT-10L KM688100LT-7L 1Mx8 bit Low Power CMOS Static RAM

68B10

Abstract: KM688 KM68B1002-8
Text: KM68B1002 BiCMOS SRAM 131,072 WORD x 8 Bit Ultra High-Speed BiCMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time: 8, 9, 1 0 ,1 2 ,15ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.) (CMOS): 10mA (Max.) Operating K M 68B1002J-8:175m A (Max.)

OCR Scan

PDF

KM68B1002 68B1002J-8 68B1002J-9 68B1002J-10 68B1002J-12 68B1002J-15 KM68B1002J 32-SOJ-400 576-bit 68B10 KM688 KM68B1002-8

Untitled

Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC h? E D • 7^4142 KM68B1002 OD17b^l I bb BiCMOS SRAM 131,072 WORD x 8 Bit Ultra High-Speed BiCMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time: 8 ,9 ,1 0 ,1 2 ,15ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.)