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Text: SEMICONDUCTOR KDS125T TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES E ・Small package : TS6. K 1 6 G 2 5 G ・Low forward voltage. K B 3 4 DIM A B C D E D A ・Small total capacitance. F ・Fast reverse recovery time.
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Abstract: No abstract text available
Text: SEMICONDUCTOR KDS125T TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. TENTATIVE FEATURES Small package : TS6. Low forward voltage. E Fast reverse recovery time. K VRM 85 V Reverse Voltage VR 80 V Maximum Peak Forward Current
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Abstract: No abstract text available
Text: SEMICONDUCTOR KDS125T TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES E Small package : TS6. K 1 6 G 2 5 G Low forward voltage. K B 3 4 DIM A B C D E D A Small total capacitance. F Fast reverse recovery time.
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MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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Text: SEMICONDUCTOR TECHNICAL DATA KDS125T s il ic o n e p it a x ia l p l a n a r d io d e ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES • Small package : TS6. • Low forward voltage. • Fast reverse recovery time. • Small total capacitance. MAXIMUM RATING Ta=25°C
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KDS125T
100mA
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