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    K9K2G08Q0M Search Results

    K9K2G08Q0M Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K9K2G08Q0M Samsung Electronics 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Original PDF
    K9K2G08Q0M-P Samsung Electronics 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Original PDF
    K9K2G08Q0M-P Samsung Electronics 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Original PDF
    K9K2G08Q0M-PCB0 Samsung Electronics 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Original PDF
    K9K2G08Q0M-PCB0 Samsung Electronics 256M x 8 Bit NAND Flash Memory Original PDF
    K9K2G08Q0M-PIB0 Samsung Electronics 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Original PDF
    K9K2G08Q0M-Y Samsung Electronics 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Original PDF
    K9K2G08Q0M-YCB0 Samsung Electronics 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Original PDF
    K9K2G08Q0M-YIB0 Samsung Electronics 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Original PDF

    K9K2G08Q0M Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    48-pin TSOP

    Abstract: K9K2G08U0M 48-pin TSOP (I) flash memory K9K2G08U0M-YCB0 samsung 1Gb nand flash SAMSUNG 4gb NAND Flash Qualification Report K9K2G08Q0M-Y K9K2G08Q0M-YCB0 K9K2G16Q0M-Y K9K2G16Q0M-YCB0
    Text: K9K2G08Q0M-YCB0,YIB0 K9K2G08U0M-YCB0,YIB0 Advance FLASH MEMORY K9K2G16Q0M-YCB0,YIB0 K9K2G16U0M-YCB0,YIB0 K9KDocument Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Aug. 30.2001


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    PDF K9K2G08Q0M-YCB0 K9K2G08U0M-YCB0 K9K2G16Q0M-YCB0 K9K2G16U0M-YCB0 48-pin TSOP K9K2G08U0M 48-pin TSOP (I) flash memory samsung 1Gb nand flash SAMSUNG 4gb NAND Flash Qualification Report K9K2G08Q0M-Y K9K2G16Q0M-Y

    Untitled

    Abstract: No abstract text available
    Text: K9K2G08Q0M-YCB0,YIB0 K9K2G08U0M-YCB0,YIB0 Advance FLASH MEMORY K9K2G16Q0M-YCB0,YIB0 K9K2G16U0M-YCB0,YIB0 K9KDocument Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue Aug. 30.2001


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    PDF K9K2G08Q0M-YCB0 K9K2G08U0M-YCB0 K9K2G16Q0M-YCB0 K9K2G16U0M-YCB0

    K9W4G08U1M

    Abstract: K9K2G08Q0M K9K2G08Q0M-PCB0 K9K2G08U0M K9K2G08U0M-FCB0 K9K2G16Q0M K9K2G16U0M K9W4G16U1M samsung 2GB X16 Nand flash 256Mx
    Text: K9W4G08U1M K9K2G08Q0M K9K2G08U0M K9W4G16U1M K9K2G16Q0M K9K2G16U0M FLASH MEMORY Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Aug. 30.2001 Advance 0.1 1. IOL R/B of 1.8V device is changed.


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    PDF K9W4G08U1M K9K2G08Q0M K9K2G08U0M K9W4G16U1M K9K2G16Q0M K9K2G16U0M K9W4G08U1M K9K2G08Q0M K9K2G08Q0M-PCB0 K9K2G08U0M K9K2G08U0M-FCB0 K9K2G16Q0M K9K2G16U0M K9W4G16U1M samsung 2GB X16 Nand flash 256Mx

    K9K2G08X0M

    Abstract: No abstract text available
    Text: K9K2G08Q0M-YCB0,YIB0 K9K2G16Q0M-YCB0,YIB0 K9K2G08U0M-YCB0,YIB0 K9K2G16U0M-YCB0,YIB0 K9K2G08U0M-VCB0,VIB0 Advance FLASH MEMORY Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue


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    PDF K9K2G08Q0M-YCB0 K9K2G16Q0M-YCB0 K9K2G08U0M-YCB0 K9K2G16U0M-YCB0 K9K2G08U0M-VCB0 K9K2G08X0M

    samsung K9 flash

    Abstract: K9 samsung samsung K9 256Mx tsop 4036 K9K2G08Q0M K9K2G08Q0M-PCB0 K9K2G08U0M K9K2G08U0M-F K9K2G16Q0M
    Text: K9W4G08U1M K9K2G08Q0M K9K2G08U0M K9W4G16U1M K9K2G16Q0M K9K2G16U0M FLASH MEMORY Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Aug. 30.2001 Advance 0.1 1. IOL R/B of 1.8V device is changed.


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    PDF K9W4G08U1M K9K2G08Q0M K9K2G08U0M K9W4G16U1M K9K2G16Q0M K9K2G16U0M samsung K9 flash K9 samsung samsung K9 256Mx tsop 4036 K9K2G08Q0M K9K2G08Q0M-PCB0 K9K2G08U0M K9K2G08U0M-F K9K2G16Q0M

    K9K2G08Q0M

    Abstract: K9K2G08Q0M-PCB0 K9K2G08U0M K9K2G08U0M-FCB0 K9K2G16Q0M K9K2G16U0M K9W4G08U1M K9W4G16U1M samsung 2GB X16 Nand flash K9K2G16X0M
    Text: K9W4G08U1M K9K2G08Q0M K9K2G08U0M K9W4G16U1M K9K2G16Q0M K9K2G16U0M FLASH MEMORY Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Aug. 30.2001 Advance 0.1 1. IOL R/B of 1.8V device is changed.


    Original
    PDF K9W4G08U1M K9K2G08Q0M K9K2G08U0M K9W4G16U1M K9K2G16Q0M K9K2G16U0M K9K2G08Q0M K9K2G08Q0M-PCB0 K9K2G08U0M K9K2G08U0M-FCB0 K9K2G16Q0M K9K2G16U0M K9W4G08U1M K9W4G16U1M samsung 2GB X16 Nand flash K9K2G16X0M

    K9K2G08Q0M

    Abstract: K9K2G08Q0M-PCB0 K9K2G08U0M K9K2G08U0M-FCB0 K9K2G16Q0M K9K2G16U0M K9W4G08U1M K9W4G16U1M samsung 2GB X16 Nand flash
    Text: K9W4G08U1M K9K2G08Q0M K9K2G08U0M K9W4G16U1M K9K2G16Q0M K9K2G16U0M FLASH MEMORY Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Aug. 30.2001 Advance 0.1 1. IOL R/B of 1.8V device is changed.


    Original
    PDF K9W4G08U1M K9K2G08Q0M K9K2G08U0M K9W4G16U1M K9K2G16Q0M K9K2G16U0M K9K2G08Q0M K9K2G08Q0M-PCB0 K9K2G08U0M K9K2G08U0M-FCB0 K9K2G16Q0M K9K2G16U0M K9W4G08U1M K9W4G16U1M samsung 2GB X16 Nand flash

    K9K2G08U0M-YCB0

    Abstract: 128Mx16bit
    Text: K9K2G08Q0M-YCB0,YIB0 K9K2G16Q0M-YCB0,YIB0 K9K2G08U0M-YCB0,YIB0 K9K2G16U0M-YCB0,YIB0 K9K2G08U0M-VCB0,VIB0 Advance FLASH MEMORY K9KDocument Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue


    Original
    PDF K9K2G08Q0M-YCB0 K9K2G16Q0M-YCB0 K9K2G08U0M-YCB0 K9K2G16U0M-YCB0 K9K2G08U0M-VCB0 128Mx16bit

    K9K2G08U0M

    Abstract: K9K2G08Q0M-PCB0 K9K2G08Q0M-YCB0 K9K2G08U0M-FCB0 K9K2G08U0M-PCB0 K9K2G08U0M-VCB0 K9K2G08U0M-YCB0 K9K2G16Q0M-YCB0 K9K2G16U0M-PCB0 K9K2G16U0M-YCB0
    Text: K9K2G08U0M-VCB0,VIB0,FCB0,FIB0 K9K2G08Q0M-YCB0,YIB0,PCB0,PIB0 K9K2G08U0M-YCB0,YIB0,PCB0,PIB0 K9K2G16Q0M-YCB0,YIB0,PCB0,PIB0 K9K2G16U0M-YCB0,YIB0,PCB0,PIB0 FLASH MEMORY Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No


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    PDF K9K2G08U0M-VCB0 K9K2G08Q0M-YCB0 K9K2G08U0M-YCB0 K9K2G16Q0M-YCB0 K9K2G16U0M-YCB0 K9K2G08U0M K9K2G08Q0M-PCB0 K9K2G08U0M-FCB0 K9K2G08U0M-PCB0 K9K2G16U0M-PCB0

    SAMSUNG NAND Flash Qualification Report

    Abstract: SAMSUNG 4gb NAND Flash Qualification Report
    Text: San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel. 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 ELECTRONICS March. 2003 1Gb 1.8V NAND Flash Errata Description : Some of AC characteristics are not meeting the specification. > AC characteristics : Refer to Table


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    PDF K9F1G08Q0M-YCB0/YIB0, K9F1G16Q0M-YCB0/YIB0 K9K2G08Q0M-YCB0/YIB0, K9K2G16Q0M-YCB0/YIB0 SAMSUNG NAND Flash Qualification Report SAMSUNG 4gb NAND Flash Qualification Report

    ELPIDA 512MB NOR FLASH

    Abstract: MT46V16M16 TIC 122 Transistor datasheet 128M DDR SDR SDRAM samsung 0 micron NAND FLASH INTERCONNECT MT46V8M16 MT48LC4M16A2 PL176 MT28S4M16 Micron MT48LC4M16A2
    Text: ARM PrimeCell MultiPort Memory Controller PL176 Revision: r0p1 Technical Reference Manual Copyright 2003 ARM Limited. All rights reserved. ARM DDI 0269A ARM PrimeCell MultiPort Memory Controller (PL176) Technical Reference Manual Copyright © 2003 ARM Limited. All rights reserved.


    Original
    PDF PL176) ELPIDA 512MB NOR FLASH MT46V16M16 TIC 122 Transistor datasheet 128M DDR SDR SDRAM samsung 0 micron NAND FLASH INTERCONNECT MT46V8M16 MT48LC4M16A2 PL176 MT28S4M16 Micron MT48LC4M16A2

    Untitled

    Abstract: No abstract text available
    Text: San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel. 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 ELECTRONICS March. 2003 1Gb 1.8V NAND Flash Errata Description : Some of AC characteristics are not meeting the specification. > AC characteristics : Refer to Table


    Original
    PDF K9F1G08Q0M-YCB0/YIB0, K9F1G16Q0M-YCB0/YIB0 K9K2G08Q0M-YCB0/YIB0, K9K2G16Q0M-YCB0/YIB0

    K9F1G08U0M-YCB0

    Abstract: K9F1G08Q0M-YCB0 Flash Memory SAMSUNG K9F1G08U0M-Y K9F1G08U0M-FCB0 K9F1G08U0M-VCB0 K9F1G16Q0M-YCB0 K9F1G16U0M-YCB0 K9F1G16X0M K9F1G08X0M
    Text: San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel. 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 ELECTRONICS March. 2003 1Gb 1.8V NAND Flash Errata Description : Some of AC characteristics are not meeting the specification. > AC characteristics : Refer to Table


    Original
    PDF K9F1G08Q0M-YCB0/YIB0, K9F1G16Q0M-YCB0/YIB0 K9K2G08Q0M-YCB0/YIB0, K9K2G16Q0M-YCB0/YIB0 K9F1G08U0M-YCB0 K9F1G08Q0M-YCB0 Flash Memory SAMSUNG K9F1G08U0M-Y K9F1G08U0M-FCB0 K9F1G08U0M-VCB0 K9F1G16Q0M-YCB0 K9F1G16U0M-YCB0 K9F1G16X0M K9F1G08X0M

    Untitled

    Abstract: No abstract text available
    Text: San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel. 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 ELECTRONICS March. 2003 1Gb 1.8V NAND Flash Errata Description : Some of AC characteristics are not meeting the specification. > AC characteristics : Refer to Table


    Original
    PDF K9F1G08Q0M-YCB0/YIB0, K9F1G16Q0M-YCB0/YIB0 K9K2G08Q0M-YCB0/YIB0, K9K2G16Q0M-YCB0/YIB0