Untitled
Abstract: No abstract text available
Text: Junel996 N NDC632P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features T hese P-C hannel logic level e n h a n c e m e n t m o d e p o w er field effect transistors are p roduced using N ationals proprietary, high cell density, DMOS
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Junel996
NDC632P
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NDC632P
Abstract: No abstract text available
Text: N Junel996 NDC632P P-Channel Logic Level Enhancement M ode Field Effect Transistor General Description Features T hese P-C hannel logic level en h an cem en t m ode po w er field effect transistors are produ ced using N ationals proprietary, high cell density, DMOS
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Junel996
NDC632P
NDC632P
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pin configuration ic 7420
Abstract: PUMAS 7420 ic details pinout 7420 pin diagram ic 7420 4007A
Text: /2 ^ < ^ 128Kx 32 EEPROM Module mosaic semiconductor, inc. PUMA67E4007/A-15/17/20/25 Issue4.1 : June 1996 Description Features > The PUMA 67E4007/A is a 4M bit CMOS EEPROM in a JEDEC J-leaded Ceramic Surface Mount Substrate. The output width is user configurable as
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PUMA67E4007/A
16or32
250ns.
100years.
MIL-STD-883.
128Kx
PUMA67E4007/9
7E4007-15/17/20/25
Junel996
67E4007AMB-15
pin configuration ic 7420
PUMAS
7420 ic details
pinout 7420
pin diagram ic 7420
4007A
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Untitled
Abstract: No abstract text available
Text: /2 ^ < 32K X 8 EEPROM ^ mosaic MEM832-90/12/15 Issue4.1 : June 1996 semiconductor, inc. 3 2 ,7 6 8 x8 Non-volatile CMOS EEPROM Description The MEM832 is a 262,144 bit Non-Volatile CMOS EEPROM organised as a 3 2 K x 8 with access times of 9 0 ,1 2 0 or 150ns. The device
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MEM832
150ns.
MILSTD-883.
MEM832-90/12/15
esof90/12/15ns
b3S337^
MILSTD883
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