BAT60B
Abstract: No abstract text available
Text: BAT60B 2 Silicon Schottky Diode 1 High current rectifier Schottky diode with low V F drop Low voltage, low inductance For power supply VPS05176 For detection and step-up-conversion Type BAT60B Marking white/5 Pin Configuration 1=C 2=A Package SOD323
|
Original
|
BAT60B
VPS05176
OD323
Jun-22-2001
BAT60B
|
PDF
|
VPS05163
Abstract: BAT70-05
Text: BAT70-05 Silicon Schottky Diode 4 Parallel connection for maximum I F per package 3 Low forward voltage drop 2 For power supply 1 For clamping and protection VPS05163 2, 4 1 3 EHA00005 ESD: Electrostatic discharge sensitive device, observe handling precaution!
|
Original
|
BAT70-05
VPS05163
EHA00005
OT223
50/60Hz,
Jun-22-2001
100ms,
VPS05163
BAT70-05
|
PDF
|
BFP196
Abstract: VPS05178
Text: BFP196 NPN Silicon RF Transistor 3 For low noise, low distortion broadband amplifiers in antenna and telecommunications 4 systems up to 1.5 GHz at collector currents from 20 mA to 80 mA 2 Power amplifier for DECT and PCN systems fT = 7.5 GHz 1 VPS05178
|
Original
|
BFP196
VPS05178
OT143
900MHz
Jun-22-2001
BFP196
VPS05178
|
PDF
|
BFQ19S
Abstract: No abstract text available
Text: BFQ19S NPN Silicon RF Transistor 1 For low noise, low distortion broadband 2 amplifiers in antenna and 3 telecommunications systems up to 1.5 GHz at collector currents from 10 mA to 70 mA 2 VPS05162 ESD: Electrostatic discharge sensitive device, observe handling precaution!
|
Original
|
BFQ19S
VPS05162
Jun-22-2001
BFQ19S
|
PDF
|
XSR Porting Guide
Abstract: BML STL samsung s3c2440 user manual SAMSUNG NAND FLASH TRANSLATION LAYER SAMSUNG NAND FLASH TRANSLATION LAYER FTL NAND XSR EPOC32 xsr v1.6.1 Extended Sector Remapper onenand xsr
Text: UniStore II v1.5.1 Installation Guide JUN-22-2006, Version 3.4 Copyright notice Copyright ⓒ Samsung Electronics Co., Ltd All rights reserved. Trademarks UniStore II is a trademark of Samsung Electronics Co., Ltd in Korea and other countries. Restrictions on Use and Transfer
|
Original
|
JUN-22-2006,
364bytes
512bytes
364bytes,
2000bytes,
512byte
XSR Porting Guide
BML STL
samsung s3c2440 user manual
SAMSUNG NAND FLASH TRANSLATION LAYER
SAMSUNG NAND FLASH TRANSLATION LAYER FTL
NAND XSR
EPOC32
xsr v1.6.1
Extended Sector Remapper
onenand xsr
|
PDF
|
BFQ19S E6327
Abstract: BAW78D BFQ19S E6327
Text: BFQ19S NPN Silicon RF Transistor 1 For low noise, low distortion broadband 2 amplifiers in antenna and 3 telecommunications systems up to 1.5 GHz at collector currents from 10 mA to 70 mA 2 VPS05162 ESD: Electrostatic discharge sensitive device, observe handling precaution!
|
Original
|
BFQ19S
VPS05162
BFQ19S E6327
BAW78D
BFQ19S
E6327
|
PDF
|
IC 7437
Abstract: BFR360F
Text: BFR360F NPN Silicon RFTransistor Preliminary data Low voltage/ low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm Low noise figure: 1.0 dB at 1.8 GHz 2 3 1 ESD: Electrostatic discharge sensitive device, observe handling precaution!
|
Original
|
BFR360F
te20mA
Jun-22-2001
-j100
IC 7437
BFR360F
|
PDF
|
BFP196W
Abstract: No abstract text available
Text: BFP196W NPN Silicon RF Transistor 3 For low noise, low distortion broadband 4 amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 89 mA Power amplifier for DECT and PCN systems 2 fT = 7.5 GHz 1 VPS05605
|
Original
|
BFP196W
VPS05605
OT343
Jun-22-2001
BFP196W
|
PDF
|
BFP196
Abstract: No abstract text available
Text: BFP196 NPN Silicon RF Transistor 3 For low noise, low distortion broadband amplifiers in antenna and telecommunications 4 systems up to 1.5 GHz at collector currents from 20 mA to 80 mA 2 Power amplifier for DECT and PCN systems fT = 7.5 GHz 1 VPS05178
|
Original
|
BFP196
VPS05178
OT143
BFP196
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BFP196W NPN Silicon RF Transistor 3 For low noise, low distortion broadband 4 amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 89 mA Power amplifier for DECT and PCN systems 2 fT = 7.5 GHz 1 VPS05605
|
Original
|
BFP196W
VPS05605
OT343
|
PDF
|
BAT60A
Abstract: No abstract text available
Text: BAT60A Silicon Schottky Diode 2 High current rectifier Schottky diode 1 with extreme low VF drop For power supply For clamping and protection in low voltage applications For detection and step-up-conversion VPS05176 ESD: Electrostatic discharge sensitive device, observe handling precaution!
|
Original
|
BAT60A
VPS05176
OD323
Jun-22-2001
BAT60A
|
PDF
|
GP 005 DIODE
Abstract: BAR50-02V SC79
Text: BAR50-02V Silicon PIN Diode 2 Current-controlled RF resistor for switching and attenuating applications Especially useful as antenna switch 1 in mobile communication VES05991 Low forward resistance, small capacitance Low inductance Small SCD package
|
Original
|
BAR50-02V
VES05991
Jun-22-2001
GP 005 DIODE
BAR50-02V
SC79
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SPECIFICATION FOR APPROVAL Customer. Description. Part No. Delta Model No. Sample Issue No. Sample Issue Date. DC FAN QFR0824SH-DT50 REV. REV. JUN-22-2013 PLEASE SEND ONE COPY OF THIS SPECIFICATION BACK AFTER YOU SIGNED APPROVAL FOR PRODUCTION PRE-ARRANGEMENT.
|
Original
|
QFR0824SH-DT50
JUN-22-2013
|
PDF
|
14907
Abstract: BFP136W
Text: BFP136W NPN Silicon RF Transistor 3 For power amplifier in DECT and PCN systems 4 fT = 5.5GHz Gold metalization for high reliability 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP136W PAs Pin Configuration
|
Original
|
BFP136W
VPS05605
OT343
900MHz
Jun-22-2001
14907
BFP136W
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: BFP196W NPN Silicon RF Transistor 3 For low noise, low distortion broadband 4 amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 89 mA Power amplifier for DECT and PCN systems 2 fT = 7.5 GHz 1 VPS05605
|
Original
|
BFP196W
VPS05605
OT343
|
PDF
|
BB833
Abstract: No abstract text available
Text: BB833 Silicon Tuning Diode 2 Extended frequency range up to 2.5 GHz; 1 special design for use in TV-sat indoor units High capacitance ratio VPS05176 Type Marking Pin Configuration Package BB833 white X 1=C SOD323 2=A Maximum Ratings Parameter Symbol Diode reverse voltage
|
Original
|
BB833
VPS05176
OD323
Jun-22-2001
/CT28
EHD07121
BB833
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SPECIFICATION FOR APPROVAL Customer. Description. Part No. Delta Model No. Sample Issue No. Sample Issue Date. DC FAN GFC0624DW-DT48 REV. REV. JUN-22-2013 PLEASE SEND ONE COPY OF THIS SPECIFICATION BACK AFTER YOU SIGNED APPROVAL FOR PRODUCTION PRE-ARRANGEMENT.
|
Original
|
GFC0624DW-DT48
JUN-22-2013
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BFP196 NPN Silicon RF Transistor 3 For low noise, low distortion broadband amplifiers in antenna and telecommunications 4 systems up to 1.5 GHz at collector currents from 20 mA to 80 mA 2 Power amplifier for DECT and PCN systems fT = 7.5 GHz 1 VPS05178
|
Original
|
BFP196
VPS05178
OT143
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BFP196 NPN Silicon RF Transistor 3 For low noise, low distortion broadband amplifiers in antenna and telecommunications 4 systems up to 1.5 GHz at collector currents from 20 mA to 80 mA 2 Power amplifier for DECT and PCN systems fT = 7.5 GHz 1 VPS05178
|
Original
|
BFP196
VPS05178
OT143
|
PDF
|
BB555
Abstract: SCD80 SMD DIODE MARKING 1401
Text: BB555 Silicon Tuning Diode 2 For UHF-TV-tuners High capacitance ratio Low series inductance 1 Low series resistance VES05991 Extremely small plastic SMD package Excellent uniformity and matching due to "in-line" matching assembly procedure Type
|
Original
|
BB555
VES05991
BB555
SCD80
Jun-22-2001
SCD80
SMD DIODE MARKING 1401
|
PDF
|
BB555-02V
Abstract: SC79
Text: BB555-02V Silicon Tuning Diode 2 For UHF-TV-tuners High capacitance ratio Low series inductance 1 Low series resistance VES05991 Extremely small plastic SMD package Excellent uniformity and matching due to "in-line" matching assembly procedure
|
Original
|
BB555-02V
VES05991
BB555-02V
Jun-22-2001
SC79
|
PDF
|
crb 455
Abstract: Voltage Doubler UMA1015M UMA1015
Text: PÂTÂ @ y iI T UMA1015M Low-power dual frequency synthesizer for radio communications Product specification Supersedes data of October 1994 File under Integrated Circuits, IC03 Philips Semiconductors 1995 Jun22 PHILIPS Philips Semiconductors Product specification
|
OCR Scan
|
UMA1015M
7110flSb
711002b
Q0T1144
crb 455
Voltage Doubler
UMA1015M
UMA1015
|
PDF
|
Untitled
Abstract: No abstract text available
Text: REVISIONS SYM A - - 8 6 .40 ECN, ZO NE PER ERN ECN NO. APPRD. DATE JU N 22/07 LCHAN 07202 [3 .4 0 2 ] - -2 7 .4 5 [1.081 —1 H
|
OCR Scan
|
JUN22/07
JUN22/D7
E07202
RJE30â
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 01 PAGE JUN-22-2000 ARRANGEMENT Of CONrACTS MO. OF CONTACTS 3 CONTACTS 4 CONTACTS 5 CONTACTS 2MJ—1511—008 2 U J - 15t 2 -0 0 8 2 M J -I5 1 3 —008 m 6 CONTACTS 7 CONTACTS 8 CONTACTS 2M J-1514-006 2 U J -IS 1 5 -0 0 8 2M J-1S16-00B 14:0? SERIES NO. T 'Î .
|
OCR Scan
|
JUN-22-2000
2MJ--1511--
J-1514-006
J-1S16-00B
SINGS00009
|
PDF
|