JANUARY1993 Search Results

Contextual Info: HARRIS SENICOND SECTOR t>AE D • M3D2271 005110 3 115 ■ HAS PCF14N05LW PCF14NÛ5LD H a r r is SEMICONDUCTOR January1993 N-Channel MOS Chip Features Die • Passivated • Contact Metallization • Gate and Source - Aluminum Silicon • Drain - Tri-Metal (Al-Ti-Ni

TM497BBK32S

Abstract: Q 4.194 304 417400D TM893CBK32 TM893CBK32S
Contextual Info: TM497BBK32, TM497BBK32S 4194 304 BY 32-BIT DYNAMIC RAM MODULE TM893CBK32, TM893CBK32S 8 388 608 BY 32-BIT DYNAMIC RAM MODULE SMMS433-JANUARY1993 Organization TM497BBK32 . . . 4 194 304 x 32 TM893CBK32 . . . 8 388 608 x 32 • Presence Detect • Performance Ranges:

dynamic ram module

Contextual Info: TM124TBK40, TM124TBK40S1 048 576 BY 40-BIT DYNAMIC RAM MODULE TM248VBK40, TM248VBK40S 2 097152 BY 40-BIT DYNAMIC RAM MODULE SMMS140-JANUARY1993 Vcc Tolerance ±10% Performance Ranges: ACCESS TIME tRAC ACCESS ACCESS READ OR TIME TIME WRITE •a a tCAC CYCLE

harris

Abstract: h20 mosfet IRFP240 Harris Semiconductor Harris Semiconductor irfp240 415A IRF240 IRF640 PCF240D transistor AL
Contextual Info: H A RR IS S E M I C O N D SE CT OR bflE D • M30 2 27 1 O O S l l l b 034 ■ HAS PCF240W PCF240D HARRIS S E M I C O N D U C T O R January1993 N-Channel MOS Chip Features Die • Passivated • Contact Metallization - Gate and Source - Aluminum - Drain • Tri-Metal Al-Tl-Nl

Contextual Info: TMS426800, TMS426800P 2 097152 WORD BY 8-BIT LOW VOLTAGE DYNAMIC RANDOM-ACCESS MEMORIES SMKS268-JANUARY1993 Organization . . . 2 097 152 x 8 Single 3.3-V Power Supply ±0.3 V Tolerance DE P A C K A G E t DZ P A C K A G E t (TOP VIEW) (TOP VIEW) vcc C 1 u

transistor N43

Abstract: harris 34
Contextual Info: HARRIS SENICOND SECTOR g ì H W bôE D • 4302271 OGSlllfl ÌO? ■ HAS PCF420W a r r is F4SP SE MI C ON D UC T O R January1993 N-Channel MOS Chip Features Die • Passivated • Contact Metallization • Gate and Source - Aluminum - Drain - Tri-Metal AI-TI-Ni

rfd3055rle

Abstract: RFD3055RLESM
Contextual Info: H A RR IS SEIIICOND SECT OR bflE D • 430 2 27 1 DDSlDHfl S'il ■ HAS PCF12N06RLEW PCF12N06RLED H A R R IS S E M I C O N D U C T O R January1993 N-Channel MOS Chip Die Features • Passivated • Contact Metallization - Gate and Source - Aluminum Silicon

HARRIS IRFD110

Abstract: IRF510
Contextual Info: H AR RIS SEIUCOND SECTOR bflE D • 430EB71 O D S lD ib ■ HAS PCF110W HARRIS a 41b SEMICONDUCTOR P January1993 ^ j F 1 1 O D N-Channel MOS Chip Features Die • Passivated • Contact Metallization - Gate and Source - Aluminum - Drain - Tri-Metal AI-Ti-NI

Contextual Info: H A RR IS S E M I C O N D SECT OR bflE 5 • Œ\ h a r r i s \M J 430 2 27 1 □ 0 5 1 DÛ 4 .7T4 ■ HAS PCF15N06LW PCF15N06LD S E M I C O N D U C T O R January1993 N-Channel MOS Chip Features Die • Passivated • Contact Metallization - Gate and Source - Aluminum

tcs-f

Contextual Info: TMS426100, TMS426100P 16777 216-BIT LOW-VOLTAGE DYNAMIC RANDOM-ACCESS MEMORY SMKS261-JANUARY1993 Organization . . . 16 777 216 x 1 DJ PA C K A G E t TOP VIEW Single 3.3-V Power Supply (±0.3-V Tolerance) 1 V CC [ Low Power Dissipation (TMS426100P Only) - 100 nA CMOS Standby

CAC P60

Contextual Info: TMS427400, TMS427400P 4194 304-WORD BY 4-BIT LOW-VOLTAGE DYNAMIC RANDOM-ACCESS MEMORIES SMKS274-JANUARY1993 DJ PACKAGEt TOP VIEW Organization . . . 4194 304 x 4 Single 3.3-V Power Supply (± 0.3 V Tolerance) V CC c 1 DQ1 : 2 DQ2 : 3 Low Power Dissipation (TMS427400P)

Contextual Info: TM16100EBD9 16 777 216 BY 9-BIT DYNAMIC RAM MODULE SMMS609-JANUARY1993 Organization. . . 16 777 216 x 9 BD SINGLE IN-LINE PACKAGE^ _ J Utilizes Nine 16-Megabit Dynamic RAMs In Plastic Small-Outline J-Lead SOJ Packages Long Refresh Period . . . 64 ms (4096

AN602

Abstract: ca capacitor IRD2 GD Rectifiers 500C BYV255 VT25 diode gp SRD12 St gp 04s
Contextual Info: AN602 APPLICATION NOTE MODELLING PARALLEL OPERATION OF POWER RECTIFIERS WITH PSPICE INTRODUCTION The behavior of semiconductor components is always linked with the junction temperature. This is the case, for example, in current-sharing between diodes connected in parallel. The current in each

Contextual Info: MOSAIC S E M I C O N D U C T O R INC LIE ]> h 35337•= D D G n ? 2 QbT * M O C 128K X 8 SRAM Module moXaic PUMA 67S4000-85/10/12 Issue 1.0 : January 1993 ADVANCE PRODUCT INFORMATION Mosaic Semicondu x- \

AN599

Abstract: AN-599 BY255 diode BYT261 100C BY255 BYT60P BYV255 BYW51
Contextual Info: AN599 APPLICATION NOTE PARALLEL OPERATION OF POWER RECTIFIERS INTRODUCTION In parallel operation of several diodes, the current is not split into equal parts because of differences between forward characteristics. The current through the rectifier having the lowest voltage drop will be higher than the current through the

Contextual Info: TMS426400, TMS426400P 4194 304-WORD BY 4-BIT LOW-VOLTAGE DYNAMIC RANDOM-ACCESS MEMORIES SMKS264-JANUARY 1993 DJ PACKAGEt TOP VIEW Single 3.3-V Power Supply (± 0.3 V Tolerance) V CC [ DQ1 [ Low Power Dissipation (TMS426400P) - 100 pA CMOS Standby - 100 pA Self-Refresh

a42s

Abstract: Mosaic OS
Contextual Info: MOSA IC S E M I C O N D U C T O R INC blE D • b 3 S 3 3 ? T □ □ □ 1 7 4 ‘î T1S ■ MOC 128K X 8 SRAM molate MSM8128-45/55/70 Issue 3.2 : January 1993 Pin Definition S em iconductor Inc. 131,072 X 8 CMOS High Speed Static RAM Features Very Fast Access Times of 45/55/70 ns