JANTXV2N7228 Search Results

T3D DIODE

Abstract: 2n7226 mosfet k 1357 T3D 76 T3D 40 DIODE 2N7228 JANTX T3D 65 diode T3D 53 diode t3d diode type T3D 83 DIODE
Contextual Info: Data Sheet No. PD-9.493E INTERNATIONAL RECTIFIER l l O R l REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM450 SN72S8 JANTX2N7228 JANTXV2N7228 ;n N-CHANNEL [REF: MIL-S-135OO/502] 500 Volt, 0.415 Ohm HEXFET Product Summary The HEXFET® technology is the key to International

2N7228 JANTX mosfet

Abstract: 2N7228 JANTX IRFM450 IOR 235 IOR MOSFET 2N7228 JANTX mosfet data sheet 2N7228 JANTXV2N7228 I-362 I-361
Contextual Info: Data Sheet No. PD-9.493E INTERNATIONAL RECTIFIER X & R REPETITIVE AVALANCHE RATED AND dv/dt RATED TRANSISTOR IRFM45Q S N 7 C E S N-CHANNEL JANTX2N722B JANTXV2N7228 REF: MIL-S-19500/59S] 500 Volt, 0.415 Ohm HEXFET Product Summary The HEXFET technology is the key to International

Contextual Info: Data Sheet No. PD-9.493E INTERNATIONAL RECTIFIER IOR REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR : IRFM450 SN7SS8 JANTX2N7228 JANTXV2N7228 N-CHANNEL [REF: M IL-S-19500/5SS] 500 Volt, 0.415 Ohm HEXFET Product Summary The HEXFET® technology is the key to International

JANTXV2N7224

Abstract: 2N7224 JANTXV 2N7228 JANTX mosfet data sheet JANTX2N7224 JANTX2N7225 2N7228 JANTX mosfet JANTX2N7228 2N7224 2N7225 2N7227
Contextual Info: 2N7224, JANTX2N7224, JANTXV2N7224 2N7225, JANTX2N7225, JANTXV2N7225 2N7227, JANTX2N7227, JANTXV2N7227 2N7228, JANTX2N7228, JANTXV2N7228 JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE, QUALIFIED TO MIL-PRF-19500/592 100V Thru 500V, Up to 34A, N-Channel, MOSFET Power Transistor, Repetitive Avalanche Rated

motor IG 2200 19

Abstract: 2N7228U IRFN450 JANTX2N7228U JANTXV2N7228U
Contextual Info: PD-90418B IRFN450 JANTX2N7228U HEXFET POWER MOSFET JANTXV2N7228U [REF:MIL-PRF-19500/592] N - CHANNEL Ω MOSFET 500 Volt, 0.415Ω Product Summary Part Number IRFN450 ® HEXFET power MOSFET technology is the key to International Rectifier’s advanced line of power

IRFM450

Abstract: JANTX2N7228 JANTXV2N7228 90493F
Contextual Info: PD - 90493F IRFM450 JANTX2N7228 JANTXV2N7228 REF: MIL-PRF-19500/592 500V, N-CHANNEL POWER MOSFET THRU-HOLE TO-254AA HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM450 0.415 Ω 12A HEXFET® MOSFET technology is the key to International

Contextual Info: SCF2N7228T1 JANTX2N7228 JANTXV2N7228 POWER MOSFET FOR RUGGED ENVIRONMENTS REF: MIL-PRF-19500/592 • N-Channel  500 Volt  < 0.415 Ohms  12 Amp TO-254AA DESCRIPTION SEMICOA’s MOSFET technology is designed for rugged environments providing excellent long term reliability. SEMICOA’s long heritage providing military grade technology and packaging allows these devices to be

Contextual Info: PD - 90493F IRFM450 JANTX2N7228 JANTXV2N7228 REF: MIL-PRF-19500/592 500V, N-CHANNEL POWER MOSFET THRU-HOLE TO-254AA HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM450 0.415 Ω 12A HEXFET® MOSFET technology is the key to International

SMD TRANSISTOR 12a

Abstract: IRFN450 JANTX2N7228U JANTXV2N7228U 400V Single N-Channel HEXFET Power MOSFET
Contextual Info: PD - 90418C POWER MOSFET SURFACE MOUNT SMD-1 Product Summary IRFN450 JANTX2N7228U JANTXV2N7228U REF:MIL-PRF-19500/592 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN450 0.415 Ω 12A HEXFET® MOSFET technology is the key to International

Contextual Info: PD - 90418C POWER MOSFET SURFACE MOUNT SMD-1 Product Summary IRFN450 JANTX2N7228U JANTXV2N7228U REF:MIL-PRF-19500/592 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN450 0.415 Ω 12A HEXFET® MOSFET technology is the key to International

IRF460

Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,

IRFM9034

Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
Contextual Info: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number

irfm9034

Contextual Info: 1 I n t e r n a t io n a l R e c t if ie r Government and Space Products Pvt Numb« 2 (3) bvdss (Vote) RDS(on) (Ohms) ID« Tc*2T (Amps) 10« TC=100“ (Amps) Pd O Tc«25° (Watts) Fax-onOamand Number Case Styl«, (Cas* (Min») (1) HEXFET Power MOSFETs Hermetic Package, N- and P-Channel

2N7334

Abstract: irfg9110 H24 SMD
Contextual Info: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130

MO-D36AB

Abstract: IRF9510 SEC IRF510 SEC 2n6845 jantx D 10.7 A IRF540 smd irf740 STAND FOR irfm9230 2N7237 JANTXV BC 542
Contextual Info: Government/ Space Products Products From ir Life, Power-Age, Environmental and Military Testing Capabilities — USA MIL-S-19500 Qualified Life Tests and Power-Age Capabilities A. H ig h te m p e ra tu re sto ra g e life te stin g up to 2 0 0 ° C . 0 . H T R B te st c a p a b ilitie s o v e r 2 5,00 0 p o s itio n s for V G S a n d for

Contextual Info: k> Part Number b vdss RDS on (V) (Q T r=25°C (A) Tf=100°C MA) Pd @ Tr = 25°C m Fax on Demand Number Case Outline Key Hermetic Packages HEXFET Power MOSFETs SMD-1 JA N TXV2N 72 !8U 100 .07? 28 20 125 JANTXV2N7219U 904 Ki» 1121 200 .18 18 11 125 90555

Contextual Info: International Government and Space HEXFET Power MOSFETs XORlRe cB fie r Hermetic Package N & P Channel Case •d @ TP = 25°C lp @ Tq = 100°C R thJC Max. Pd @ TC = 25°C Outline A (K/W) (W) Number (1) 0.04 (*> 35 28 1.0 125 0.027 35 35 0.83 150 60 0.017

Contextual Info: " F f rN A T if M A I » F C International I Q R Rectifier Government and Space Products h *D ByoSS V Part Number Tf=25°C (A) ^DS(on) (Q ^ T ,= 100°C C (A) @ T f= 2 5 ° C (W) Fax on Demand Number Case Outline Key Hermetic Packages HEXFET Power MOSFETs

jantxv2n7224

Abstract: 2N7225
Contextual Info: Government and Space Designer's Manual Table of Contents Section & Page No. HEXFET IRF S E R IE S .1-3

IRFF320

Contextual Info: 1 I n t e r n a t io n a l R e c t if ie r Government and Space Products Pvt Numbtr BVDSS 2 (3) (Vdn) R0S(on) (Ohm) N)0 TC-2S* (Amp«} Iq O Tc-IOB* (Amp*) Pq O Tc*2F (Watts) Fax-onDemand Number Case Style, (Case Outline) (1) HEXFET Power MOSFETf Hermetic Package, N- a n d P-Channel