JANTX2N7225 Search Results

JANTXV2N7224

Abstract: 2N7224 JANTXV 2N7228 JANTX mosfet data sheet JANTX2N7224 JANTX2N7225 2N7228 JANTX mosfet JANTX2N7228 2N7224 2N7225 2N7227
Contextual Info: 2N7224, JANTX2N7224, JANTXV2N7224 2N7225, JANTX2N7225, JANTXV2N7225 2N7227, JANTX2N7227, JANTXV2N7227 2N7228, JANTX2N7228, JANTXV2N7228 JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE, QUALIFIED TO MIL-PRF-19500/592 100V Thru 500V, Up to 34A, N-Channel, MOSFET Power Transistor, Repetitive Avalanche Rated

IRFN250

Abstract: JANTX2N7225U JANTXV2N7225U power mosfet audio 160V
Contextual Info: PD - 91549C POWER MOSFET SURFACE MOUNT SMD-1 Product Summary IRFN250 JANTX2N7225U JANTXV2N7225U REF:MIL-PRF-19500/592 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN250 0.100 Ω 27.4A HEXFET® MOSFET technology is the key to International

SN7S85

Contextual Info: Data Sheet No. PD-9.554D INTERNATIONAL RECTIFIER I«R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFMS50 SN7S85 JANTX2N7225 "* ~ ~ JAIMTXV2N7225 N-CHANNEL [R E F : M IL -8 -1 9 5 0 0 / 5 9 S ] Product Summary 200 Volt, 0.100 Ohm HEXFET

Contextual Info: SCF2N7225T1 JANTX2N7225 JANTXV2N7225 POWER MOSFET FOR RUGGED ENVIRONMENTS REF: MIL-PRF-19500/592 • N-Channel  200 Volt  < 0.100 Ohms  27.4 Amp TO-254AA DESCRIPTION SEMICOA’s MOSFET technology is designed for rugged environments providing excellent long term reliability. SEMICOA’s long heritage providing military grade technology and packaging allows these devices to be

IR LFN

Abstract: LFN ir D0113 CJ10L 2N7225 IRFM250 2N7225 JANTX 024-S
Contextual Info: Data Sheet No. PD-9.554D INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM250 SN7SS5 JANTX2N7225 JANTXV2N72S5 N-CHANNEL REF: MIL-S-1S500/5B&] Product Summary 200 Volt, 0.100 Ohm HEXFET The HEXFET® technology is the key to International

IRFM250

Abstract: JANTX2N7225 JANTXV2N7225
Contextual Info: PD - 90554E POWER MOSFET THRU-HOLE TO-254AA Product Summary IRFM250 JANTX2N7225 JANTXV2N7225 REF:MIL-PRF-19500/592 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFM250 0.100 Ω 27.4A HEXFET® MOSFET technology is the key to International

IRFM250

Contextual Info: PD-90554F POWER MOSFET THRU-HOLE TO-254AA IRFM250 JANTX2N7225 JANTXV2N7225 REF:MIL-PRF-19500/592 200V, N-CHANNEL Product Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFM250 0.100 Ω 27.4A HEXFET® MOSFET technology is the key to International

2N7225U

Abstract: SMD1P IRFN250 JANTX2N7225U JANTXV2N7225U mosfet ir 250 n 2n7225
Contextual Info: PD-91549B IRFN250 JANTX2N7225U HEXFET POWER MOSFET JANTXV2N7225U [REF:MIL-PRF-19500/592] N - CHANNEL Ω MOSFET 200 Volt, 0.100Ω HEXFET® power MOSFET technology is the key to InternationalRectifier’s advanced line of power MOSFET transistors. The efficient geometry

Contextual Info: PD-90554F POWER MOSFET THRU-HOLE TO-254AA IRFM250 JANTX2N7225 JANTXV2N7225 REF:MIL-PRF-19500/592 200V, N-CHANNEL Product Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFM250 0.100 Ω 27.4A HEXFET® MOSFET technology is the key to International

Contextual Info: PD - 91549C POWER MOSFET SURFACE MOUNT SMD-1 Product Summary IRFN250 JANTX2N7225U JANTXV2N7225U REF:MIL-PRF-19500/592 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN250 0.100 Ω 27.4A HEXFET® MOSFET technology is the key to International

IRF460

Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,

IRFM9034

Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
Contextual Info: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number

irfm9034

Contextual Info: 1 I n t e r n a t io n a l R e c t if ie r Government and Space Products Pvt Numb« 2 (3) bvdss (Vote) RDS(on) (Ohms) ID« Tc*2T (Amps) 10« TC=100“ (Amps) Pd O Tc«25° (Watts) Fax-onOamand Number Case Styl«, (Cas* (Min») (1) HEXFET Power MOSFETs Hermetic Package, N- and P-Channel

2N7334

Abstract: irfg9110 H24 SMD
Contextual Info: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130

MO-D36AB

Abstract: IRF9510 SEC IRF510 SEC 2n6845 jantx D 10.7 A IRF540 smd irf740 STAND FOR irfm9230 2N7237 JANTXV BC 542
Contextual Info: Government/ Space Products Products From ir Life, Power-Age, Environmental and Military Testing Capabilities — USA MIL-S-19500 Qualified Life Tests and Power-Age Capabilities A. H ig h te m p e ra tu re sto ra g e life te stin g up to 2 0 0 ° C . 0 . H T R B te st c a p a b ilitie s o v e r 2 5,00 0 p o s itio n s for V G S a n d for

Contextual Info: International Government and Space HEXFET Power MOSFETs XORlRe cB fie r Hermetic Package N & P Channel Case •d @ TP = 25°C lp @ Tq = 100°C R thJC Max. Pd @ TC = 25°C Outline A (K/W) (W) Number (1) 0.04 (*> 35 28 1.0 125 0.027 35 35 0.83 150 60 0.017

Contextual Info: _ I n t e r n a t i o n a l R e c t if ie r Government and Space Products Part Number P bvdss Vohj) RDS(on) (Ohmi) 10« To*25* ID« Tc*100° (Amp*) (Amps) Total Dos* Rating Radi (Si) PD« To2P (Watts) Fax-onDrniand Number

Contextual Info: " F f rN A T if M A I » F C International I Q R Rectifier Government and Space Products h *D ByoSS V Part Number Tf=25°C (A) ^DS(on) (Q ^ T ,= 100°C C (A) @ T f= 2 5 ° C (W) Fax on Demand Number Case Outline Key Hermetic Packages HEXFET Power MOSFETs

jantxv2n7224

Abstract: 2N7225
Contextual Info: Government and Space Designer's Manual Table of Contents Section & Page No. HEXFET IRF S E R IE S .1-3