Untitled
Abstract: No abstract text available
Text: 1N3847 Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 5.0m Peak Curr. Tol.50m Total Cap. (F)25p Ip/Iv Min6.0 Vp Vv Fwd Volt @Ipeak510m Resist. Cutoff Freq Series Induct. (H) R(series) (Ohms)3.0 Neg Resist. Semiconductor MaterialGermanium
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1N3847
Ipeak510m
StyleDO-25var
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Untitled
Abstract: No abstract text available
Text: 1N3717 Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 4.7m Peak Curr. Tol.12m Total Cap. (F)25p Ip/Iv Min7.6 Vp65m Vv355m Fwd Volt @Ipeak510m Resist. Cutoff Freq3.4G Series Induct. (H).50n R(series) (Ohms).52 Neg Resist.24 Semiconductor MaterialGermanium
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1N3717
Vp65m
Vv355m
Ipeak510m
StyleDO-17
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Untitled
Abstract: No abstract text available
Text: 1N3713+JAN Diodes General Purpose Tunnel Diode Military/High-RelY Ipeak Max. A 1.0m Peak Curr. Tol.25u Total Cap. (F)5.0p Ip/Iv Min7.0 Vp65m Vv355m Fwd Volt @Ipeak510m Resist. Cutoff Freq3.2G Series Induct. (H)500p R(series) (Ohms)1.7 Neg Resist.118 Semiconductor MaterialGermanium
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1N3713
Vp65m
Vv355m
Ipeak510m
StyleDO-17
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Untitled
Abstract: No abstract text available
Text: 1N3719+JAN Diodes General Purpose Tunnel Diode Military/High-RelY Ipeak Max. A 10m Peak Curr. Tol.25m Total Cap. (F)50p Ip/Iv Min7.0 Vp65m Vv355m Fwd Volt @Ipeak510m Resist. Cutoff Freq2.8G Series Induct. (H).50n R(series) (Ohms).36 Neg Resist.12 Semiconductor MaterialGermanium
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1N3719
Vp65m
Vv355m
Ipeak510m
StyleDO-17
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Untitled
Abstract: No abstract text available
Text: MS1157 Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 100m Peak Curr. Tol.10m Total Cap. (F)50p Ip/Iv Min6.0 Vp100m Vv390m Fwd Volt @Ipeak510m Resist. Cutoff Freq Series Induct. (H).30n R(series) (Ohms).50 Neg Resist.2.0 Semiconductor MaterialGermanium
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MS1157
Vp100m
Vv390m
Ipeak510m
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Untitled
Abstract: No abstract text available
Text: 1N3717+JAN Diodes General Purpose Tunnel Diode Military/High-RelY Ipeak Max. A 4.7m Peak Curr. Tol.12m Total Cap. (F)25p Ip/Iv Min7.6 Vp65m Vv355m Fwd Volt @Ipeak510m Resist. Cutoff Freq3.4G Series Induct. (H).50n R(series) (Ohms).52 Neg Resist.24 Semiconductor MaterialGermanium
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1N3717
Vp65m
Vv355m
Ipeak510m
StyleDO-17
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Untitled
Abstract: No abstract text available
Text: MS1168 Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 50m Peak Curr. Tol.5.0m Total Cap. (F)25p Ip/Iv Min6.0 Vp90m Vv390m Fwd Volt @Ipeak510m Resist. Cutoff Freq Series Induct. (H).35n R(series) (Ohms).75 Neg Resist.4.0 Semiconductor MaterialGermanium
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MS1168
Vp90m
Vv390m
Ipeak510m
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Untitled
Abstract: No abstract text available
Text: 1N3721+JAN Diodes General Purpose Tunnel Diode Military/High-RelY Ipeak Max. A 22m Peak Curr. Tol.50m Total Cap. (F)100p Ip/Iv Min7.0 Vp65m Vv355m Fwd Volt @Ipeak510m Resist. Cutoff Freq2.6G Series Induct. (H).50n R(series) (Ohms).22 Neg Resist.5.3 Semiconductor MaterialGermanium
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1N3721
Vp65m
Vv355m
Ipeak510m
StyleDO-17
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Untitled
Abstract: No abstract text available
Text: 1N3719 Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 10m Peak Curr. Tol.25m Total Cap. (F)50p Ip/Iv Min7.0 Vp65m Vv355m Fwd Volt @Ipeak510m Resist. Cutoff Freq2.8G Series Induct. (H).50n R(series) (Ohms).36 Neg Resist.12 Semiconductor MaterialGermanium
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1N3719
Vp65m
Vv355m
Ipeak510m
StyleDO-17
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