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    IXYS Corporation IXTQ26N60P

    MOSFET N-CH 600V 26A TO3P
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    TME IXTQ26N60P 1
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    IXTQ26N60P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTQ26N60P
    		IXYS PolarHV Power MOSFET Original PDF

    IXTQ26N60P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXTH26N60P

    Abstract: IXTQ26N60P IXTT26N60P IXTV26N60P IXTV26N60PS PLUS220SMD
    Contextual Info: PolarHVTM Power MOSFET IXTH26N60P IXTQ26N60P IXTT26N60P IXTV26N60P IXTV26N60PS N-Channel Enhancement Mode Avalanche Rated VDSS = 600 V ID25 = 26 A Ω RDS on ≤ 270 mΩ TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V


    Original     		IXTH26N60P IXTQ26N60P IXTT26N60P IXTV26N60P IXTV26N60PS O-247 IXTH26N60P IXTQ26N60P IXTT26N60P IXTV26N60P IXTV26N60PS PLUS220SMD PDF

    Contextual Info: PolarHVTM Power MOSFET IXTH26N60P IXTQ26N60P IXTT26N60P IXTV26N60P IXTV26N60PS N-Channel Enhancement Mode Avalanche Rated VDSS = 600 V ID25 = 26 A Ω RDS on ≤ 270 mΩ TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V


    Original     		IXTH26N60P IXTQ26N60P IXTT26N60P IXTV26N60P IXTV26N60PS O-247 IXTH26N60P PDF