IXTH6N150 Search Results

IXTH6N150 Price and Stock

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Littelfuse Inc IXTH6N150 MOSFET N-CH 1500V 6A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTH6N150	Tube			1	1 $13.42 10 $13.42 100 $8.14167 1000 $6.756 10000 $6.756	Buy Now
Newark	IXTH6N150	Bulk			300	1 - 10 - 100 - 1000 $7.08 10000 $7.08	Buy Now
IXYS Corporation IXTH6N150 MOSFETs HIGH VOLT PWR MOSFET 1500V 6A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXTH6N150					1 $11.66 10 $11.61 100 $6.82 1000 $6.75 10000 $6.75	Get Quote
Future Electronics	IXTH6N150	Tube			600	1 - 10 - 100 $6.73 1000 $6.62 10000 $6.62	Buy Now
TTI	IXTH6N150	Tube			300	1 - 10 - 100 - 1000 $6.76 10000 $6.76	Buy Now
TME	IXTH6N150				1	1 $11.59 10 $9.18 100 $8.25 1000 $8.25 10000 $8.25	Get Quote
New Advantage Corporation	IXTH6N150		478		1	1 - 10 - 100 $16.65 1000 $15.54 10000 $15.54	Buy Now
IXYS Integrated Circuits Division IXTH6N150 MOSFET DIS.6A 1500V N-CH TO247-3 H.VOLTAGE THT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Ozdisan Elektronik	IXTH6N150		578			1 $12.48936 10 $12.48936 100 $11.6723 1000 $11.6723 10000 $11.6723	Buy Now

IXTH6N150 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXTH6N150		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1500V 6A TO-247		Original	PDF

IXTH6N150 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: High Voltage Power MOSFETs VDSS ID25 IXTT6N150 IXTH6N150 1500V 6A 3.5Ω RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	PDF	IXTT6N150 IXTH6N150 O-268 6N150
Untitled Abstract: No abstract text available Text: Preliminary Technical Information IXTT6N150 IXTH6N150 High Voltage Power MOSFETs VDSS ID25 1500V 6A 3.5Ω RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1500 V VDGR	Original	PDF	IXTT6N150 IXTH6N150 O-268 O-247 6N150
IXTH6N150 Abstract: 6n150 Text: Advance Technical Information IXTH6N150 High Voltage Power MOSFET VDSS ID25 = = RDS on ≤ 1500V 6A 3.5Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	PDF	IXTH6N150 O-247 6N150 IXTH6N150 6n150
IXTT6N150 Abstract: No abstract text available Text: IXTT6N150 IXTH6N150 High Voltage Power MOSFETs VDSS ID25 1500V 6A 3.5Ω RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	PDF	IXTT6N150 IXTH6N150 O-268 O-247 6N150