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    IXTH3N150 Search Results

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    IXTH3N150 Price and Stock

    Littelfuse Inc IXTH3N150

    MOSFET N-CH 1500V 3A TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTH3N150 Tube 166 1
    • 1 $9.37
    • 10 $9.37
    • 100 $7.905
    • 1000 $7.59337
    • 10000 $7.59337
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    Newark IXTH3N150 Bulk 300
    • 1 -
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    • 100 -
    • 1000 $7.96
    • 10000 $7.96
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    IXYS Corporation IXTH3N150

    MOSFETs High Voltage Power MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXTH3N150 137
    • 1 $9.19
    • 10 $9.19
    • 100 $7.88
    • 1000 $7.59
    • 10000 $7.59
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    TTI IXTH3N150 Tube 300 30
    • 1 -
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    • 100 $7.8
    • 1000 $7.5
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    TME IXTH3N150 1
    • 1 $12.72
    • 10 $10.05
    • 100 $9.04
    • 1000 $9.04
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    IXTH3N150 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTH3N150
    		IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1500V 3A TO-247 Original PDF

    IXTH3N150 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXTH3N150

    Contextual Info: IXTH3N150 High Voltage Power MOSFET VDSS ID25 = = RDS on ≤ 1500V 3A 7.3Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTH3N150 O-247 100ms 3N150 0-26-10-A IXTH3N150 PDF

    IXTH3N150

    Contextual Info: IXTH3N150 High Voltage Power MOSFET VDSS ID25 = = RDS on  1500V 3A 7.3 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1500 V VDGR TJ = 25C to 150C, RGS = 1M


    Original     		IXTH3N150 O-247 100ms 3N150 0-26-10-A IXTH3N150 PDF

    IXTH3N150

    Abstract: 3N150 T3N1 Vdss 1500V
    Contextual Info: Advance Technical Information IXTH3N150 High Voltage Power MOSFET VDSS ID25 = = RDS on ≤ 1500V 3A 7.3Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTH3N150 O-247 100ms 3N150 0-26-10-A IXTH3N150 T3N1 Vdss 1500V PDF

    IXTH3N150

    Contextual Info: High Voltage Power MOSFET VDSS ID25 IXTH3N150 = = RDS on ≤ 1500V 3A 7.3Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTH3N150 O-247 100ms 3N150 0-26-10-A IXTH3N150 PDF