IXFR16N120P Search Results

IXFR16N120P Price and Stock

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Littelfuse Inc IXFR16N120P MOSFET N-CH 1200V 9A ISOPLUS247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFR16N120P	Tube			300	1 - 10 - 100 - 1000 $14.74013 10000 $14.74013	Buy Now
Newark	IXFR16N120P	Bulk			300	1 - 10 - 100 - 1000 $15.45 10000 $15.45	Buy Now
RS	IXFR16N120P	Bulk		8 Weeks	30	1 - 10 - 100 $22.8 1000 $22.8 10000 $22.8	Get Quote
IXYS Corporation IXFR16N120P MOSFETs 16 Amps 1200V 1 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXFR16N120P					1 - 10 - 100 - 1000 $14.99 10000 $14.99	Get Quote
Future Electronics	IXFR16N120P	Tube		26 Weeks	30	1 - 10 - 100 $17.27 1000 $17.27 10000 $17.27	Buy Now
TTI	IXFR16N120P	Tube			300	1 - 10 - 100 - 1000 $14.74 10000 $14.74	Buy Now
TME	IXFR16N120P		10		1	1 $25.28 10 $20.14 100 $17.83 1000 $17.83 10000 $17.83	Buy Now

IXFR16N120P Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXFR16N120P		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 9A ISOPLUS247		Original	PDF

IXFR16N120P Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: IXFR16N120P PolarTM HiperFETTM Power MOSFET VDSS ID25 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 1200V 9A Ω 1.04Ω 300ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	PDF	IXFR16N120P 300ns ISOPLUS247 E153432 16N120P 9-12-12-B
Untitled Abstract: No abstract text available Text: Preliminary Technical Information IXFR16N120P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	PDF	IXFR16N120P ISOPLUS247 E153432 300ns 16N120P
Untitled Abstract: No abstract text available Text: VDSS ID25 IXFR16N120P PolarTM Power MOSFET HiPerFETTM RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous	Original	PDF	IXFR16N120P 300ns ISOPLUS247 E153432 16N120P 4-03-08-A
ISOPLUS247 Abstract: IXFR16N120P 16N120P N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A Text: IXFR16N120P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous	Original	PDF	IXFR16N120P ISOPLUS247 E153432 300ns 16N120P 4-03-08-A ISOPLUS247 IXFR16N120P N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A
1200 volt mosfet Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P Text: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET	Original	PDF	000-1200V IXFB30N120P IXFL30N120P IXFN30N120P IXFL32N120P IXFN32N120P PluS220 IXFV110N10PS 1200 volt mosfet 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P