IXFN44N100P Search Results

IXFN44N100P Price and Stock

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IXYS Corporation IXFN44N100P MOSFET Modules 44 Amps 1000V 0.22 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXFN44N100P		100			1 $46.14 10 $38.65 100 $35.5 1000 $29.59 10000 $29.59	Buy Now
Future Electronics	IXFN44N100P	Tube		35 Weeks	300	1 - 10 $30.66 100 $30.21 1000 $29.83 10000 $29.83	Buy Now
TTI	IXFN44N100P	Tube			300	1 - 10 - 100 - 1000 $28.87 10000 $28.87	Buy Now
TME	IXFN44N100P				1	1 $44.42 10 $35.29 100 $35.29 1000 $35.29 10000 $35.29	Get Quote
Vyrian	IXFN44N100P		1,539			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Littelfuse Inc IXFN44N100P Trans MOSFET N-CH 1KV 37A 4-Pin SOT-227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Arrow Electronics	IXFN44N100P		270	35 Weeks	1	1 $38.3098 10 $36.6715 100 $35.1145 1000 $34.0339 10000 $34.0339	Buy Now
Newark	IXFN44N100P	Bulk			300	1 - 10 - 100 - 1000 $31.02 10000 $31.02	Buy Now
RS	IXFN44N100P	Bulk		8 Weeks	10	1 - 10 $45.77 100 $45.77 1000 $45.77 10000 $45.77	Get Quote

IXFN44N100P Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXFN44N100P		IXYS	FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 1000V 37A SOT-227B		Original	PDF

IXFN44N100P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IXFN44N100P Abstract: 44N100P 40108 Text: IXFN44N100P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXFN44N100P 300ns OT-227 E153432 44N100P 4-01-08-D IXFN44N100P 40108	PDF
Untitled Abstract: No abstract text available Text: VDSS ID25 IXFN44N100P PolarTM Power MOSFET HiPerFETTM = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXFN44N100P 300ns OT-227 E153432 44N100P 4-01-08-D	PDF
Untitled Abstract: No abstract text available Text: Preliminary Technical Information IXFN44N100P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = 1000V = 37A ≤ 220mΩ Ω ≤ 300ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions	Original	IXFN44N100P 300ns OT-227 E153432 44N100P 8-27-07-B	PDF
IXTD08N100P-1A Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2 Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types	Original		PDF
1200 volt mosfet Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P Text: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET	Original	000-1200V IXFB30N120P IXFL30N120P IXFN30N120P IXFL32N120P IXFN32N120P PluS220 IXFV110N10PS 1200 volt mosfet 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P	PDF