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    IXFN40N110P Price and Stock

    Littelfuse Inc IXFN40N110P

    MOSFET N-CH 1100V 34A SOT-227B
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    DigiKey IXFN40N110P Tube 300
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    RS IXFN40N110P Bulk 8 Weeks 10
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    IXYS Corporation IXFN40N110P

    Module; single transistor; 1.1kV; 34A; SOT227B; screw; Idm: 100A
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    TME IXFN40N110P 1 1
    • 1 $48.53
    • 10 $38.47
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    IXFN40N110P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFN40N110P IXYS FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 1100V 34A SOT-227B Original PDF

    IXFN40N110P Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXFN40N110P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1100V 34A Ω 260mΩ 300ns miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions


    Original     		IXFN40N110P 300ns OT-227 E153432 40N110P PDF

    40n110p

    Abstract: IXFN40 IXFN40N110P
    Text: IXFN40N110P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1100 V VGSS Continuous


    Original     		IXFN40N110P 300ns OT-227 E153432 40N110P 3-28-08-A IXFN40 IXFN40N110P PDF

    Untitled

    Abstract: No abstract text available
    Text: VDSS ID25 IXFN40N110P PolarTM Power MOSFET HiPerFETTM RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1100 V VGSS Continuous


    Original     		IXFN40N110P 300ns OT-227 E153432 40N110P 3-28-08-A PDF

    1200 volt mosfet

    Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P
    Text: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET


    Original     		000-1200V IXFB30N120P IXFL30N120P IXFN30N120P IXFL32N120P IXFN32N120P PluS220 IXFV110N10PS 1200 volt mosfet 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P PDF