Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IXFN36N110P Search Results

    SF Impression Pixel

    IXFN36N110P Price and Stock

    IXYS Corporation IXFN36N110P

    MOSFET N-CH 1100V 36A SOT-227B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFN36N110P Tube 10
    • 1 -
    • 10 $37.788
    • 100 $37.788
    • 1000 $37.788
    • 10000 $37.788
    Buy Now

    IXFN36N110P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFN36N110P IXYS FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 1100V 36A SOT-227B Original PDF

    IXFN36N110P Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    8v80

    Abstract: No abstract text available
    Text: PolarTM Power MOSFET HiPerFETTM IXFN36N110P VDSS = ID25 = RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ VGSS VGSM 1100V


    Original
    IXFN36N110P 300ns OT-227 E153432 36N110P 4-01-08-A 8v80 PDF

    Untitled

    Abstract: No abstract text available
    Text: OBSOLETE IXFN36N110P PolarTM HiPerFETTM Power MOSFET VDSS = ID25 = RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ VGSS


    Original
    50/60Hz, IXFN36N110P 300ns 36N110P 4-01-08-A PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFN36N110P VDSS = ID25 = RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original
    IXFN36N110P OT-227 36N110P PDF

    1200 volt mosfet

    Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P
    Text: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET


    Original
    000-1200V IXFB30N120P IXFL30N120P IXFN30N120P IXFL32N120P IXFN32N120P PluS220 IXFV110N10PS 1200 volt mosfet 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P PDF