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    IXFK32N100P Search Results

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    IXFK32N100P Price and Stock

    IXYS Corporation IXFK32N100P

    MOSFETs 32 Amps 1000V 0.32 Rds
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    Mouser Electronics IXFK32N100P 364
    • 1 $23.11
    • 10 $21.28
    • 100 $15.35
    • 1000 $15.35
    • 10000 $15.35
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    Future Electronics IXFK32N100P Tube 35 Weeks 300
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    • 100 $15.69
    • 1000 $15.48
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    TTI IXFK32N100P Tube 300
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    • 100 -
    • 1000 $14.98
    • 10000 $14.98
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    TME IXFK32N100P 1
    • 1 $25.65
    • 10 $20.21
    • 100 $18.47
    • 1000 $18.47
    • 10000 $18.47
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    Littelfuse Inc IXFK32N100P

    Discmosfetn-Ch Hiperfet-Polar To-264(3)/ Tube |Littelfuse IXFK32N100P
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    Newark IXFK32N100P Bulk 300
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    • 1000 $16.1
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    RS IXFK32N100P Bulk 8 Weeks 25
    • 1 -
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    • 100 $23.75
    • 1000 $23.75
    • 10000 $23.75
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    IXFK32N100P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFK32N100P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 32A TO-264 Original PDF

    IXFK32N100P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFK32N100P IXFX32N100P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original
    IXFK32N100P IXFX32N100P 300ns 32N100P 8-24-07-B PDF

    IXFX32N100P

    Abstract: ixfk32n100p PLUS247
    Text: PolarTM Power MOSFET HiPerFETTM IXFK32N100P IXFX32N100P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 1000 1000 V


    Original
    IXFK32N100P IXFX32N100P 300ns O-264 32N100P 3-28-08-C IXFX32N100P ixfk32n100p PLUS247 PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarTM Power MOSFET HiPerFETTM IXFK32N100P IXFX32N100P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 1000 1000 V V VGSS VGSM Continuous


    Original
    IXFK32N100P IXFX32N100P 300ns 32N100P 3-28-08-C PDF