IRLI3303 Search Results

IRLI3303 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IRLI3303		International Rectifier	HEXFET Power Mosfet		Original	PDF

Catalog Datasheet	Type	Document Tags	PDF
IRFI840G Abstract: IRL3303 IRLI3303 Contextual Info: PD - _ IRLI3303 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated VDSS = 30V RDS on = 0.026Ω ID = 25A Description	Original	IRLI3303 O-220 IRFI840G IRL3303 IRLI3303	PDF
Contextual Info: International S Rectifier PD — IRLI3303 p r e l im in a r y HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated	OCR Scan	IRLI3303 1897IR	PDF
IRFI840G Abstract: IRL3303 IRLI3303 Contextual Info: Previous Datasheet Index Next Data Sheet PD - _ IRLI3303 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated VDSS = 30V	Original	IRLI3303 O-220 IRFI840G IRL3303 IRLI3303	PDF
Contextual Info: International 1 ]Rectifier PD — IR L13303 p re lim in a ry HEXFET® Power MOSFET • • • • • • Logic-Level Gate Drive Ad van ced P rocessTechnology Isolated Package High Voltage Isolation = 2.5 K V R M S Sink to Lead Creepage Dist. = 4.8mm	OCR Scan	L13303	PDF