IRL6903 Search Results

Contextual Info: PD - 9.1640B International IÖR Rectifier IRL6903S/L • Logic-Level Gate Drive • Advanced Process Technology • Surface Mount IRL6903S • Low-profile through-hole (IRL6903L) • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated

Contextual Info: International IQR Rectifier pd-mwo > preliminary IRL6903S HEXFET Power M O SFET • Logic-Levei Gate Drive • Advanced Process Technology • Surface Mount • Fast Switching • P-Channel • Fully Avalanche Rated Voss = -30V R D S on = 0 .0 1 1Q Id = -91 A

Contextual Info: P D - 9 .1 5 3 8 B International l R Rectifier IRL6903 HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated Description

IRL6903

Contextual Info: PD - 9.1538B IRL6903 HEXFET Power MOSFET Logic-Level Gate Drive l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D VDSS = -30V RDS on = 0.011Ω G ID = -105A…

L415

Abstract: 30V 10.5A p-channel MOSFET 25i5 diode sv 03
Contextual Info: P D - 9 .1 6 4 0 B International IS R Rectifier IRL6903S/L HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Surface Mount IRL6903S • Low-profile through-hole (IRL6903L) • 175°C Operating Temperature • Fast Switching

IRL6903

Abstract: F53 DIODE IRL6903L IRL6903S
Contextual Info: PD - 9.1640A IRL6903S/L Logic-Level Gate Drive l Advanced Process Technology l Surface Mount IRL6903S l Low-profile through-hole (IRL6903L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description HEXFET Power MOSFET

IRF1010I

Abstract: 1538B
Contextual Info: PD - 9 .1538B International IÖR Rectifier IRL6903 HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated Description

IRF3205 equivalent

Abstract: IRF 9732 IRFz44n equivalent IRF3710 equivalent IRF4905 equivalent IRC540 equivalent irf 9450 IRF 9734 IRF5305 equivalent irf 9740
Contextual Info: 4.1.1 HIGH TEMPERATURE REVERSE BIAS HTRB HEXFET GENERATION 3, TO-220/D2PAK PACKAGE Junction Temperature: Tj = +150°C or 175°C, as indicated Applied Bias: Vg = Vs = 0V; Vd = 100% of maximum rated Bvdss up to 500V then 80% of maximum rated Bvdss Equivalent Dev. Test

IRF5905

Abstract: MOSFET IRF 9732 transistor equivalent irf510 IRF3710 equivalent IRFz44n equivalent IRF 9732 irf2807 equivalent IRF3205 application IRD110 HTGB
Contextual Info: TABLE OF CONTENTS EXECUTIVE SUMMARY i 1.0 INTRODUCTION 1-1 2.0 USING HEXFET RELIABILITY INFORMATION 2-1 3.0 THE MATRIX QUALIFICATION PHILOSOPHY 3.1 CRITICAL HEXFET ATTRIBUTES FOR CONSIDERATION IN MATRIX QUALIFICATION 3.2 CROSS REFERENCE FOR ALL PART TYPES