IRL3103L Search Results

Contextual Info: PD-91338F International IÖR Rectifier • • • • • • • IRL3103S/L HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Surface Mount IRL3103S Low-profile through-hole (IRL3103L) 175°C Operating Temperature Fast Switching

1RL3103S

Abstract: C528 DIODE C525 DIODE C529 DIODE IRL3103S C527 C529
Contextual Info: PD - 9.1338E International M R Rectifier IRL3103S/L HEXFET Power MOSFET • • • • • • • Logic-Level Gate Drive Advanced Process Technology Surface Mount IRL3103S Low-profile through-hole (IRL3103L) 175°C Operating Temperature Fast Switching

Contextual Info: PD - 94925B IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10 s Short Circuit Capability. • Square RBSOA.

Contextual Info: PD - 96040 AUTOMOTIVE MOSFET IRF1404ZPbF IRF1404ZSPbF IRF1404ZLPbF Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET

P-Channel MOSFET 800v

Abstract: 800v irf IRF P CHANNEL MOSFET IRF P CHANNEL MOSFET 100v IRFBE30L IRFBE30S IRL3103L P-Channel mosfet 400v P Channel Power MOSFET IRF ED marking code diode
Contextual Info: PD - 95507 IRFBE30SPbF IRFBE30LPbF O O O O O O HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 800V RDS on = 3.0Ω G ID = 4.1A S Description Third Generation HEXFETs from International

AN-994

Abstract: IRF530N IRF530NL IRF530NS IRF530S 4.5v to 100v input regulator
Contextual Info: PD - 91352B IRF530NS IRF530NL HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 90mΩ G ID = 17A S Description

IRF530S

Abstract: IRFZ44VL IRFZ44VS IRL3103L
Contextual Info: PD - 94050A IRFZ44VS IRFZ44VL l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications HEXFET Power MOSFET D VDSS = 60V RDS on = 16.5mΩ

Contextual Info: PD - 94310 Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description IRF634N IRF634NS IRF634NL l HEXFET Power MOSFET l D RDS on = 0.435Ω

Contextual Info: PD- 95759 IRF840LCSPbF IRF840LCLPbF • Lead-Free Document Number: 91068 8/24/04 www.vishay.com 1 IRF840LCS/LPbF Document Number: 91068 www.vishay.com 2 IRF840LCS/LPbF Document Number: 91068 www.vishay.com 3 IRF840LCS/LPbF Document Number: 91068 www.vishay.com

AN-994

Abstract: IRF1404 IRF1404L IRF1404S IRF530S
Contextual Info: PD -93853C IRF1404S IRF1404L HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description ® l D l VDSS = 40V RDS on = 0.004Ω G The D2Pak is a surface mount power package capable of

C-150

Abstract: IRF1010 IRF530S IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 FD059H06A5
Contextual Info: PD - 94607A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 C VCES = 600V Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.

AN-994

Abstract: IRFZ48Z IRFZ48ZL IRFZ48ZS
Contextual Info: PD - 94763 IRFZ48Z IRFZ48ZS IRFZ48ZL AUTOMOTIVE MOSFET Features O O O O O O Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Description HEXFET Power MOSFET

IRF2204L

Abstract: IRF2204S
Contextual Info: PD - 94502 IRF2204S IRF2204L AUTOMOTIVE MOSFET Typical Applications ● ● HEXFET Power MOSFET Electric Power Steering 14 Volts Automotive Electrical Systems D VDSS = 40V Features ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance

MOSFET IRFB 630

Abstract: IRFB 630 93804B MOSFET IRFB 630 Datasheet transistor IRF 630 AN1001 IRF1010 IRFB41N15D IRFIB41N15D IRFS41N15D
Contextual Info: PD - 93804B IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D Applications l HEXFET Power MOSFET High frequency DC-DC converters VDSS RDS on max Benefits l l l Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See

IRF1010

Abstract: IRF530S IRL3103L IRL7833 IRL7833L IRL7833S International Rectifier MOSFET 24V DC switch marking code dh
Contextual Info: PD - 94668 IRL7833 IRL7833S IRL7833L Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Consumer Use Benefits l Very Low RDS on at 4.5V VGS

igbt 50V 420A

Abstract: 94659 IRF2807Z AN-994 IRF2807ZL IRF2807ZS
Contextual Info: PD - 94659A IRF2807Z IRF2807ZS IRF2807ZL AUTOMOTIVE MOSFET Features O O O O O O Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax HEXFET Power MOSFET

AN-994

Abstract: IRF530S IRFZ34N IRFZ34NL IRFZ34NS IRL3103L
Contextual Info: PD - 95571 Advanced Process Technology Surface Mount IRFZ34NS Low-profile through-hole (IRFZ34NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free l l l l l l l IRFZ34NSPbF IRFZ34NLPbF HEXFET Power MOSFET D RDS(on) = 0.040Ω

AN-994

Abstract: IRL3103L IRLZ44N IRLZ44NL IRLZ44NS
Contextual Info: PD - 95156 IRLZ44NS/LPbF Logic-Level Gate Drive l Advanced Process Technology l Surface Mount IRLZ44NS l Low-profile through-hole (IRLZ44NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET

irf 418

Abstract: IRL3103L IRL3803S
Contextual Info: PD-95101A IRL3803SPbF IRL3803LPbF • Lead-Free www.irf.com 1 12/9/04 IRL3803S/LPbF 2 www.irf.com IRL3803S/LPbF www.irf.com 3 IRL3803S/LPbF 4 www.irf.com IRL3803S/LPbF www.irf.com 5 IRL3803S/LPbF 6 www.irf.com IRL3803S/LPbF www.irf.com 7 IRL3803S/LPbF D2Pak Package Outline

DM marking code

Abstract: IRLZ44Z IRLZ44ZL IRLZ44ZS
Contextual Info: PD - 95849 IRLZ44Z IRLZ44ZS IRLZ44ZL AUTOMOTIVE MOSFET Features ● ● ● ● ● ● Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax HEXFET Power MOSFET

IRFZ48Z/S/LP

Abstract: ISD 1720 AN-994 IRFZ48Z IRFZ48ZL IRFZ48ZS
Contextual Info: PD - 94763 IRFZ48Z IRFZ48ZS IRFZ48ZL AUTOMOTIVE MOSFET Features O O O O O O Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Description HEXFET Power MOSFET

IRF1302L

Abstract: IRF1302S
Contextual Info: PD - 94520 AUTOMOTIVE MOSFET IRF1302S IRF1302L Benefits ● ● ● ● ● ● HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

IRFB 630

Abstract: MOSFET IRFB 630 Datasheet MOSFET IRFB 630 transistor IRF 630 120V DC to DC Converter 10A TO-220 FULLPAK Package AN1001 IRF1010 IRFB41N15D IRFIB41N15D
Contextual Info: PD - 93804B IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D Applications l HEXFET Power MOSFET High frequency DC-DC converters VDSS RDS on max Benefits l l l Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See

AN1001

Abstract: 94358 IRFS38N20D IRF1010 IRF530S IRFB38N20D IRFSL38N20D 94358a
Contextual Info: PD - 94358A IRFB38N20D IRFS38N20D IRFSL38N20D SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See