IRHN7130 Search Results

IRHN7130

Abstract: IRHN3130 IRHN4130 IRHN8130 diode smd to3
Contextual Info: PD - 90821C RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-1 IRHN7130 100V, N-CHANNEL ™ RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHN7130 100K Rads (Si) IRHN3130 300K Rads (Si) IRHN4130 600K Rads (Si) IRHN8130 1000K Rads (Si)

Contextual Info: PD - 90821C RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-1 IRHN7130 100V, N-CHANNEL ™ RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHN7130 100K Rads (Si) IRHN3130 300K Rads (Si) IRHN4130 600K Rads (Si) IRHN8130 1000K Rads (Si)

IRHN7130

Abstract: IRHN8130
Contextual Info: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.821A REPETITIVE AVALANCHE AND dv/dt RATED IRHN7130 IRHN8130 HEXFET TRANSISTOR N-CHANNEL MEGA RAD HARD Ω , MEGA RAD HARD HEXFET 100 Volt, 0.18Ω International Rectifier’s MEGA RAD HARD technology

IRHN7130

Abstract: IRHN8130
Contextual Info: PD - 90821B IRHN7130 IRHN8130 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N CHANNEL MEGA RAD HARD Ω , MEGA RAD HARD HEXFET 100Volt, 0.18Ω International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total

Contextual Info: Data Sheet No. PD-9.821A INTERNATIONAL RECTIFIER X O R AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRHN7130 IRHN8130 N-CHANNEL MEGA RAD HARD 100 Volt, 0.180, MEGA RAD HARD HEXFET Product Summary International Rectifier's MEGA RAD HARD Technology

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Contextual Info: Data Sheet No. PD-9.821A INTERNATIONAL RECTIFIER I Ö R AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRHN7130 IRHN8130 MEGA RAD HARD 100 Volt, 0.18«, MEGA RAD HARD HEXFET International Rectifier’s M EGA RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability

IRHN7130

Abstract: IRHN8130
Contextual Info: Provisional Data Sheet No. PD-9.821A REPETITIVE AVALANCHE AND dv/dt RATED IRHN7130 IRHN8130 HEXFET TRANSISTOR N-CHANNEL MEGA RAD HARD Ω , MEGA RAD HARD HEXFET 100 Volt, 0.18Ω International Rectifier’s MEGA RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation

IRF460

Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,

IRFM9034

Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
Contextual Info: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number

2N7334

Abstract: irfg9110 H24 SMD
Contextual Info: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130

10RIA10

Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
Contextual Info: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy

2N6764 JANTX

Abstract: 91447 IR2113L
Contextual Info: Government / Space Products Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  Radiation-Hardened HEXFET Description Datasheets IRH7054 IRH7130 IRH7150 IRH7230 IRH7250 IRH7250SE IRHF7330SE IRHF7430SE IRH7450

JANSR2N7261

Contextual Info: International lÜRectifier Government and Space HEXFET Power MOSFETs Radiation Hardened N & P Channel R tltJC Max. Pd@ Case rc = ioo°c TC = 25°C Outline A (K/W) (W) Number (1) (2) Pari b v dss Number (V) RDS(on) (Ohms) IRHE7110 100 0.60 3.1 2.0 11 11 IRHE8110

Contextual Info: Government and Space Products International IO R Rectifier • d Part Number Tc=2S°C RDS on b VD$S (A) (V) T f=100°C (A) Total Dose Rating Rads (Si) p @ Ic = 25°C (W) HEXFET ® Power MOSFETs Fax Case on Demand Outline Key Number R a d ia tio n H a rd e n e d

IRHE7110

Abstract: IRHE7130 IRHE7230 IRHE8110 IRHE8130 IRHE8230 IRHE9130 IRHN7054 IRHN7130 1RHF8130
Contextual Info: 4flss4s2 DQlblbb 2Û4 - From ,R HEXFET Paît Number bvdss V RDS(on) (OHMS) RAD HARD id @ Tq = 25°C •d @ Tc = 100”C RthJC Max. Pd @ Tc = 25-C (A) (A) (K/W) (W) IRHE7110 100 0.60 3.1 2.0 11 11 IRHE8110 100 0.60 3.1 2.0 11 11 22 IRHE7130 100 0.18 8.0 5.0

Contextual Info: I n t e r n a t io n a l R e c t if ie r Government and Space Products Part Numb« Wffl bvdss Vota ROS(on) (Ohm) ID* TC«25" 4A"P*) Iq O TolOO* (Amp») Total Dow Riling Rids (St) Pq O Tc»2P (Witts) Fu-ooDwnmd Numbtr _ _ _ _ _ _ _ -_ _ _ _ _ _ _ _ _ _ _