IRGMC50UD Search Results
IRGMC50UD Datasheets Context Search
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Contextual Info: IRGMC50UD Transistors N-Channel IGBT V BR CES (V)600 V(BR)GES (V) I(C) Max. (A)35 Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case.83 Thermal Resistance Junc-Amb.48 g(fe) Min. (S) Trans. admitt.16 |
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IRGMC50UD delay24nà time27nà time180nà me27nà | |
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Contextual Info: International pm a Hü Rectifier_ IRGMC50U INSULATED GATE BIPOLAR TRANSISTOR UltraFast™ IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while |
OCR Scan |
IRGMC50U O-254 IRGMC50UD IRGMC50UU G-105 | |
T3D 87
Abstract: t3d 99 G-100 IRGMC50U
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OCR Scan |
IRGMC50U IRGMC50U IRGMC50UD IRGMC50UU MIL-S-19500 O-254 G-105 T3D 87 t3d 99 G-100 |