IRG7PH35UD1PBF Search Results

IRG7PH35UD1PBF Price and Stock

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Infineon Technologies AG IRG7PH35UD1PBF IGBT 1200V 50A 179W TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRG7PH35UD1PBF	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
International Rectifier IRG7PH35UD1PBF IGBT WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPL Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	IRG7PH35UD1PBF		400			1 - 10 - 100 - 1000 - 10000 -	Get Quote

IRG7PH35UD1PBF Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IRG7PH35UD1PBF		International Rectifier	IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 50A 179W TO247		Original	PDF

IRG7PH35UD1PBF Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
irg7ph35 Abstract: irg7ph35ud1pbf irg7ph35ud diode 30s IRG7PH35UD1-EP IRG7PH35UD1 Text: PD - 97455A IRG7PH35UD1PbF IRG7PH35UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • Low VCE ON trench IGBT Technology Low Switching Losses	Original	PDF	7455A IRG7PH35UD1PbF IRG7PH35UD1-EP 1300Vpk O-247AD irg7ph35 irg7ph35ud diode 30s IRG7PH35UD1-EP IRG7PH35UD1
Untitled Abstract: No abstract text available Text: IRG7PH35UD1PbF IRG7PH35UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • C Low VCE ON trench IGBT Technology Low Switching Losses Square RBSOA	Original	PDF	IRG7PH35UD1PbF IRG7PH35UD1-EP 1300Vpk JESD47F) O-247AC O-247AD
IRG7PH35UD1PbF Abstract: IRG7PH35UD1 IRG7PH35UD1-EP P channel 600v 20a IGBT irg7ph35 C-150 IRG7PH35U IRG7PH35UD ir igbt 1200V 10A igbt 20A 1200v Text: PD - 97455 IRG7PH35UD1PbF IRG7PH35UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • Low VCE ON trench IGBT Technology Low Switching Losses Square RBSOA	Original	PDF	IRG7PH35UD1PbF IRG7PH35UD1-EP 1300Vpk O-247AD IRG7PH35UD1PbF IRG7PH35UD1 IRG7PH35UD1-EP P channel 600v 20a IGBT irg7ph35 C-150 IRG7PH35U IRG7PH35UD ir igbt 1200V 10A igbt 20A 1200v
Untitled Abstract: No abstract text available Text: PD - 97455A IRG7PH35UD1PbF IRG7PH35UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • C Low VCE ON trench IGBT Technology Low Switching Losses	Original	PDF	7455A IRG7PH35UD1PbF IRG7PH35UD1-EP 1300Vpk O-247AD
irg7ph35 Abstract: IRG7PH35UD1PBF IRG7CH35UB IC A 3120 MIL-HDBK-263 IRG7PH35UD1-EP irg7ch35u IRG7PH35UD1 IRG7CH IRG7PH35UD Text: PD - 97463 IRG7CH35UB Features • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Square RBSOA Positive VCE (ON) Temperature co-efficient Tight parameter distribution G E n-channel Benefits Applications • High Efficiency due to Low VCE(on) and Low Switching	Original	PDF	IRG7CH35UB irg7ph35 IRG7PH35UD1PBF IRG7CH35UB IC A 3120 MIL-HDBK-263 IRG7PH35UD1-EP irg7ch35u IRG7PH35UD1 IRG7CH IRG7PH35UD