IRFZ44N Search Results

MOSFET IRFZ44N

Abstract: irfz44n pin of IRFZ44N IRFZ44N MOSFET OF IRFZ44N for irfz44n
Contextual Info: IRFZ44N N-Channel Enhancement-Mode MOSFET VDS 55V RDS ON 20mΩ ID 49A H C t EN ET c R u T NF rod P GE New D TM G TO-220AB 0.185 (4.70) 0.170 (4.31) 0.154 (3.91) Dia. 0.142 (3.60) 0.415 (10.54) Max. 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.102 (2.56) * 0.155 (3.93)

AN-994

Abstract: IRFZ44NL IRFZ44NS
Contextual Info: PD - 94153 Advanced Process Technology Surface Mount IRFZ44NS l Low-profile through-hole (IRFZ44NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRFZ44NS IRFZ44NL l HEXFET Power MOSFET l Advanced HEXFET® Power MOSFETs from International

IRFZ44N APPLICATION NOTE

Abstract: dc motor irfz44n IRFz44n equivalent datasheet of irfz44n MOSFET IRFZ44N IRFZ44N datasheet for irfz44n pin of IRFZ44N IRFZ44N DATASHEET 0010T2
Contextual Info: IRFZ44N ! N-CHANNEL Power MOSFET APPLICATION FEATURES ‹ ‹Ultra Low ON Resistance Buck Converter High Side Switch ‹DC motor control , Ups .etc , & other Application RDS ON Max. VDSS 55V 17.5mȍ ‹Low Gate Charge ‹ Dynamic dv/dt Rating ID ‹ Inductive Switching Curves

IRFZ44ND

Abstract: n 308 al N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Contextual Info: IRFZ44ND N-Channel Enhancement-Mode MOSFET Die VDS 55V RDS ON 20mΩ ID 49A Chip Geometry H C EN ET R T NF duct GE ew Pro N D TM Source G Gate S Physical Characteristics Features • Die size : 4040 X 1890µm (159 X 74.4 mils) • Metalization: Top: Al/Si/Cu

IRFZ44NPBF

Abstract: IRF (10A) 55V IRF1010
Contextual Info: PD - 94787 IRFZ44NPbF Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 17.5mΩ G ID = 49A S Description Advanced HEXFET® Power MOSFETs from International

Contextual Info: PD - 95124 l l l l l l l IRFZ44NSPbF IRFZ44NLPbF Advanced Process Technology Surface Mount IRFZ44NS Low-profile through-hole (IRFZ44NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free Description HEXFET Power MOSFET D VDSS = 55V

Contextual Info: PD - 94153 Advanced Process Technology Surface Mount IRFZ44NS l Low-profile through-hole (IRFZ44NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRFZ44NS IRFZ44NL l HEXFET Power MOSFET l Advanced HEXFET® Power MOSFETs from International

marking code EA SMD MOSFET

Abstract: AN-994 IRF530S IRFZ44NS SMD-220
Contextual Info: PD - _ IRFZ44NS PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Surface Mount Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 55V RDS on = 0.024Ω ID = 41A Description Fifth Generation HEXFETs from International Rectifier

MOSFET IRFZ44N

Abstract: IRFZ44N for irfz44n pin of IRFZ44N IRFz44n equivalent of irfz44n datasheet of irfz44n ne 22 mosfet datasheet for irfz44n
Contextual Info: IRFZ44N N-Channel Enhancement-Mode MOSFET VDS 55V RDS ON 20mΩ ID 49A H C t N c E u TRENFET w Prod Ne G TO-220AB 0.185 (4.70) 0.170 (4.31) 0.154 (3.91) Dia. 0.142 (3.60) 0.415 (10.54) Max. 0.410 (10.41) 0.350 (8.89) G PIN D 0.603 (15.32) 0.573 (14.55)

IRFZ44NS

Contextual Info: IRFZ44NS N-Channel Enhancement-Mode MOSFET VDS 55V RDS ON 20mΩ ID 49A H C N t E ET c u R d T ENF ro P G New D TO-263AB 0.160 (4.06) 0.190 (4.83) 0.380 (9.65) 0.420 (10.67) G S 0.045 (1.14) 0.055 (1.40) 0.21 (5.33) Min. 0.42 (10.66) D 0.320 (8.13) 0.360 (9.14)

Contextual Info: c p ;> G en er a l x! S e m ic o n d u c to r IRFZ44NS N-Channel Enhancement-Mode MOSFET ♦ V d s 55V R d S ON 20m Q I d 49A TO-263AB 0.160 (4.06) 0.190(4.83) 0.380(9.65) . 0.420(10.67) 0.045(1.14) ' 0.055(1.40) 0.21 (5.33) | ^ - Min. ~+\ T 0.320 (8.13)

surface mount IRFZ44N

Abstract: AN-994 IRFZ44N IRFZ44NL IRFZ44NS IRFZ44N APPLICATION NOTE irfz44nsl
Contextual Info: PD - 9.1315A IRFZ44NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRFZ44NS Low-profile through-hole (IRFZ44NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.022Ω G ID = 49A

Contextual Info: IRFZ44NS IRFZ44NL TO-263 TO-262 l l l l l l Advanced Process Technology Surface Mount IRFZ44NS Low-profile through-hole (IRFZ44NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Description The D2Pak is a surface mount power package capable of

z44n

Contextual Info: PD - 9.1315A International IQ R Rectifier IRFZ44NS/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRFZ44NS • Low-profilethrough-hole(IRFZ44NL) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated V dss = 55V

IRFZ44N

Contextual Info: PD - 9.1303B International IQ R Rectifier IRFZ44N HEXFET Power MOSFET Advanced Process Technology Dynam ic dv/dt Rating 175 °C Operating Tem perature Fast Switching Fully Avalanche Rated V d s s = 55 V RüS on = 0.022Q. ID = 49A Description Fifth Generation HEXFETs from International Rectifier

IRFZ44NS

Contextual Info: International ^Rectifier PD91315 IRFZ44NS preliminary HEXFET Power MOSFET • • • • • • Advanced Process Technology Surface Mount Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: IRFZ44NS/NL Power MOSFET VDSS = 55V, RDS on = 0.0175 ohm, ID = 49 A D G S Symbol N Channel ELECTRICAL CHARACTERISICS at Parameter Tj = 25 C Maximum. Unless stated Otherwise Drain to Source Breakdown Voltage Drain to Source Leakage Current Gate to Source Leakage Current

IRF (10A) 55V

Abstract: AN-994 IRFZ44NL IRFZ44NS IRL3103L
Contextual Info: PD - 95124 l l l l l l l IRFZ44NSPbF IRFZ44NLPbF Advanced Process Technology Surface Mount IRFZ44NS Low-profile through-hole (IRFZ44NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free Description Advanced HEXFET Power MOSFETs from International

IRFZ44N

Abstract: MOSFET IRFZ44N IRFz44n equivalent for irfz44n datasheet of irfz44n datasheet for irfz44n IRFZ44N APPLICATION NOTE top240
Contextual Info: PD - 94053 IRFZ44N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 17.5mΩ G ID = 49A S Description Advanced HEXFET® Power MOSFETs from International

Contextual Info: , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. N-Channel MOSFET Transistor IRFZ44N FEATURES 0( 2) • Drain Current -ID=49A@ TC=25°C • Drain Source Voltage- pII : VDSS= 55V(Min) • Static Drain-Source On-Resistance

1RFZ44N

Abstract: TR C458 surface mount IRFZ44N 1RFZ44
Contextual Info: PD - 9.1315A International IG R Rectifier IRFZ44NS/L HEXFET Power MOSFET • • • • • • Advanced Process Technology Surface Mount IRFZ44NS Low-profile through-hole (IRFZ44NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated V dss = 55 V

irfz44n

Abstract: MOSFET IRFZ44N of irfz44n for irfz44n
Contextual Info: <=p = G en er a l v S e m ic o n d u c t o r _ IRFZ44N N-Channel Enhancement-Mode MOSFET V d s 55V RDS ON)20mQ Id 49A ft - ' ' Features •Dynamic dv/dt Rating ■Repetitive Avalanche Rated ■175°C Operating Temperature ■Ease of Paralleling

IRFZ44NS D2PAK

Contextual Info: IRFZ44NS/LPbF D2Pak Package Outline Dimensions are shown in millimeters inches D2Pak Part Marking Information (Lead-Free) T H IS IS AN IR F 5 3 0 S W IT H L O T CO D E 8 0 2 4 AS S E M B L E D O N W W 0 2 , 2 0 0 0 IN T H E AS S E M B L Y L IN E "L " IN T E R N AT IO N AL

IRFZ44N

Contextual Info: PD - 94053 IRFZ44N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 17.5mΩ G ID = 49A S Description Advanced HEXFET® Power MOSFETs from International