IRFY340 Search Results

IRFY340C

Abstract: IRFY340CM MOSFETs. Rectifier
Contextual Info: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD 9.1290B IRFY340CM HEXFET POWER MOSFET N-CHANNEL Product Summary 400 Volt, 0.55Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.

IRFY340

Abstract: IRFY340C IRFY340CM IRFY340M
Contextual Info: PD - 94189 POWER MOSFET THRU-HOLE TO-257AA IRFY340,IRFY340M 400V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY340 0.55 Ω 8.7A Glass IRFY340M 0.55 Ω 8.7A Glass HEXFET® MOSFET technology is the key to International

IRFY340

Abstract: 87A DIODE
Contextual Info: IRFY340 MECHANICAL DATA N–CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS Dimensions in mm inches 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 BVDSS ID RDS(on) 10.41 10.92 13.39 13.64 16.38 16.89 10.41 10.67 12.70 19.05 1 2 3 400V 8.7A 0.55Ω FEATURES • 0.89 1.14

IRFY340

Abstract: SHD2264 SHD226404
Contextual Info: SENSITRON SEMICONDUCTOR SHD226404 TECHNICAL DATA DATA SHEET 213, REV. B Formerly Part Number SHD2264 HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 400 Volt, 0.55 Ohm, 6.9 A MOSFET • Low RDS on • Equivalent to IRFY340 Series • Add a C after SHD for ceramic eyelets

Contextual Info: IRFY340 MECHANICAL DATA N–CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS Dimensions in mm inches 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 BVDSS ID RDS(on) 10.41 10.92 13.39 13.64 16.38 16.89 10.41 10.67 12.70 19.05 1 2 3 400V 8.7A 0.55 FEATURES • 0.89 1.14 •

Contextual Info: PD - 91290C POWER MOSFET THRU-HOLE TO-257AA IRFY340C,IRFY340CM 400V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY340C 0.55 Ω 8.7A Ceramic IRFY340CM 0.55 Ω 8.7A Ceramic HEXFET® MOSFET technology is the key to International

IRFY340C

Contextual Info: IRFY340C Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package. 10.6 (0.42) 4.6 (0.18) 10.6 (0.42) 3.70 Dia. Nom 1.5(0.53) 16.5 (0.65) 0.8 (0.03) 1 2 3 12.70 (0.50 min) VDSS = 400V ID = 8.7A RDS(ON) = 0.55Ω Ω 1.0 (0.039)

IRFY340C

Abstract: IRFY340CM
Contextual Info: PD - 91290C POWER MOSFET THRU-HOLE TO-257AA IRFY340C,IRFY340CM 400V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY340C 0.55 Ω 8.7A Ceramic IRFY340CM 0.55 Ω 8.7A Ceramic HEXFET® MOSFET technology is the key to International

IRFY340C

Abstract: IRFY340CM
Contextual Info: Provisional Data Sheet No. PD 9.1290B IRFY340CM HEXFET POWER MOSFET N-CHANNEL Product Summary 400 Volt, 0.55Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.

irfy340

Contextual Info: SENSITRON SEMICONDUCTOR SHD226404 TECHNICAL DATA DATA SHEET 213, REV. A Formerly Part Number SHD2264 HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 400 Volt, 0.55 Ohm, 6.9 A MOSFET œ Low RDS on œ Equivalent to IRFY340 Series œ Add a C after SHD for ceramic eyelets

Contextual Info: mi =Vr= INI IRFY340 SEM E LAB MECHANICAL DATA N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS D im e nsio ns in mm inches 4 .70 5 .00 10.41 1 0.67 0.70 0.90 3.56 Dia. 3.81 V DSS 400V 6.9A 0.55ft ID(cont) 1 2 ^DS(on) FEATURES • HERMETICALLY SEALED T 0-220 METAL

IRFY340

Contextual Info: IRFY340 MECHANICAL DATA Dimensions in mm inches 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 VDSS ID(cont) RDS(on) 10.41 10.92 13.39 13.64 10.41 10.67 16.38 16.89 N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 1 2 3 400V 6.9A Ω 0.55Ω 12.70 19.05 FEATURES 0.89

IRFY340

Abstract: SHD2264 SHD226404
Contextual Info: SENSITRON SEMICONDUCTOR SHD226404 TECHNICAL DATA DATA SHEET 213, REV. A Formerly Part Number SHD2264 HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 400 Volt, 0.55 Ohm, 6.9 A MOSFET œ Low RDS on œ Equivalent to IRFY340 Series œ Add a C after SHD for ceramic eyelets

Contextual Info: Provisional Data Sheet No. PD 9.1290B International ICR Rectifier HEXFET PO W ER M O S FE T IRFY340CM N-CHANNEL Product Summary 400 Volt, 0.55Q HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The effi­

IRFM9034

Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
Contextual Info: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number

irf5n5210sc

Abstract: IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS
Contextual Info: PD - 94246A IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 4# TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si)

Contextual Info: International Government and Space HEXFET Power MOSFETs IlC T R e c H ffe r Hermetic Package N & P Channel Part Number b v DSS V RDS(on) (Ohms) lp @ Tr = 25°C <D@ TC = 100°C R thJC Max. Pd @ Case Tc = 25°C Outline (»> (A) (K/W) (W) Number (1) 0.6 17

irfm9034

Contextual Info: 1 I n t e r n a t io n a l R e c t if ie r Government and Space Products Pvt Numb« 2 (3) bvdss (Vote) RDS(on) (Ohms) ID« Tc*2T (Amps) 10« TC=100“ (Amps) Pd O Tc«25° (Watts) Fax-onOamand Number Case Styl«, (Cas* (Min») (1) HEXFET Power MOSFETs Hermetic Package, N- and P-Channel

2N7334

Abstract: irfg9110 H24 SMD
Contextual Info: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130

SHD239608

Abstract: shd239606
Contextual Info: SENSITRON SEMICONDUCTOR 2000 CATALOG HERMETIC POWER MOSFETs N-CHANNEL, TO-254, TO-257 TYPE NUMBER DRAIN TO SOURCE BREAKDOWN VOLTAGE V (BR)DSS Volts CONTINUOUS DRAIN CURRENT ID MAXIMUM POWER DISSIPATION PD STATIC DRAIN TO SOURCE ON RESISTANCE RDS(on) MAXIMUM

10RIA10

Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
Contextual Info: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy

IRHNA57064SCS

Abstract: IRHNJ597230SCS IRHNJ9130SCS IRHG6110SCS IRHY7434 IRHE57130SCS 8CLJQ045SCV IRHNJ57034SCS irfy9230 35CLQ045SCS
Contextual Info: PD - 94046B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597230 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ597230 100K Rads (Si) IRHNJ593230 300K Rads (Si) RDS(on) 0.505Ω 0.505Ω ID -8.0A -8.0A SMD-0.5

JANTX2N7334

Abstract: irfy430
Contextual Info: Government/ " Space Products ^ I,a“ 4“ D0lb171 b41 " INTERNATIONAL RECTIFIER H EXFET - INR other Products From IR bSE D High Reliability/Mil Qualified •d @ TC = 25°C ■d @ Tc = 100°C ■HhJC Max. W A (WW) 0.70 0.70 0.70 0.70 1.0 1.0 1.0 1.0 0.6

MO-D36AB

Abstract: IRF9510 SEC IRF510 SEC 2n6845 jantx D 10.7 A IRF540 smd irf740 STAND FOR irfm9230 2N7237 JANTXV BC 542
Contextual Info: Government/ Space Products Products From ir Life, Power-Age, Environmental and Military Testing Capabilities — USA MIL-S-19500 Qualified Life Tests and Power-Age Capabilities A. H ig h te m p e ra tu re sto ra g e life te stin g up to 2 0 0 ° C . 0 . H T R B te st c a p a b ilitie s o v e r 2 5,00 0 p o s itio n s for V G S a n d for