IRFR410B
Abstract: IRFU410B
Text: IRFR410B / IRFU410B 520V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to
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IRFR410B
IRFU410B
IRFU410B
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IRFU410B
Abstract: IRFR410B
Text: IRFR410B / IRFU410B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to
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Original
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IRFR410B
IRFU410B
IRFU410B
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Untitled
Abstract: No abstract text available
Text: IRFR410B / IRFU410B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to
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Original
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IRFR410B
IRFU410B
IRFU410B
IRFU410BTU
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