IRFN5210 Search Results
IRFN5210 Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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IRFN5210 |
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P-Channel Power MOSFET | Original | |||
IRFN5210 |
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P-Channel Power MOSFET | Scan |
IRFN5210 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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IRFN5210Contextual Info: IRFN5210 MECHANICAL DATA Dimensions in mm inches P–CHANNEL POWER MOSFET 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6 |
Original |
IRFN5210 -100V 300ms, IRFN5210 | |
IRFN5210
Abstract: IRF5210SMD
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Original |
IRFN5210 -100V 300ms, IRFN5210 IRF5210SMD | |
Contextual Info: P-CHANNEL POWER MOSFET IRFN5210 • Low RDS on Power MOSFET Transistor, Fully Avalanche Rated • Hermetic Ceramic Surface Mount package • Designed For Fast Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) |
Original |
IRFN5210 -100V -120A 780ms) O-276AB) IRF5210SMD IRF5210SMD | |
uc 5587
Abstract: IRFN5210 LE17
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Original |
IRFN5210 -100V -120A 780mJ O-276AB) IRF5210SMD IRF5210SMD uc 5587 IRFN5210 LE17 | |
Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
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Original |
2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN |