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    IRFH5010TR

    Abstract: IRFH5010TRPBF PQFN footprint mosfet 500V 50A IRFH5010 AN-1154 IRFH5010TR2PBF
    Contextual Info: PD -96297 IRFH5010PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID 100 V 9.0 mΩ 65 1.2 nC 100 (@Tc(Bottom) = 25°C) Ω h PQFN 5X6 mm A Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors


    Original     		IRFH5010PbF IRFH5010TRPBF IRFH5010TR2PBF 181mH, IRFH5010TR IRFH5010TRPBF PQFN footprint mosfet 500V 50A IRFH5010 AN-1154 IRFH5010TR2PBF PDF

    Contextual Info: IRFH5010PbF HEXFET Power MOSFET VDS 100 V RDS on max 9.0 mΩ Qg (typical) 67 nC RG (typical) 1.2 Ω (@VGS = 10V) ID 100 (@Tc(Bottom) = 25°C) h PQFN 5X6 mm A Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications


    Original     		IRFH5010PbF PDF

    Contextual Info: PD-96297A IRFH5010PbF HEXFET Power MOSFET VDS 100 V RDS on max 9.0 mΩ Qg (typical) 67 nC RG (typical) 1.2 Ω (@VGS = 10V) ID 100 (@Tc(Bottom) = 25°C) h PQFN 5X6 mm A Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors


    Original     		PD-96297A IRFH5010PbF IRFH5010TRPBF IRFH5010TR2PBF 181mH, PDF

    IRFH5010TRPBF

    Abstract: mosfet 500V 50A IRFH5010TR
    Contextual Info: PD-96297A IRFH5010PbF HEXFET Power MOSFET VDS 100 V RDS on max 9.0 mΩ Qg (typical) 67 nC RG (typical) 1.2 Ω (@VGS = 10V) ID 100 (@Tc(Bottom) = 25°C) h PQFN 5X6 mm A Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors


    Original     		PD-96297A IRFH5010PbF 181mH, IRFH5010TRPBF mosfet 500V 50A IRFH5010TR PDF