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    IRFF322, Search Results

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    IRFF322, Price and Stock

    Rochester Electronics LLC IRFF322

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFF322 Bulk 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.65
    • 10000 $0.65
    		Buy Now

    Harris Semiconductor IRFF322

    IRFF322 - 2.0A, 400V, 2.5 OHM, N-Channel POWER MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics IRFF322 500 1
    • 1 $0.625
    • 10 $0.625
    • 100 $0.5875
    • 1000 $0.5313
    • 10000 $0.5313
    		Buy Now

    IRFF322, Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFF322 General Electric Power Transistor Data Book 1985 Scan PDF
    IRFF322 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFF322 International Rectifier TO-39 Package N-Channel HEXFET Scan PDF
    IRFF322 International Rectifier N-Channel Power MOSFETs Scan PDF
    IRFF322 International Rectifier TO-39 N-Channel HEXFET Power MOSFETs Scan PDF
    IRFF322 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFF322 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRFF322 Unknown FET Data Book Scan PDF
    IRFF322 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRFF322 Siliconix N-Channel Enhancement Mode Transistors TO-205AF Scan PDF
    IRFF322 Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF
    IRFF322R Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFF322R International Rectifier Rugged Series Power MOSFETs - N-Channel Scan PDF
    IRFF322R Unknown Shortform Datasheet & Cross References Data Short Form PDF

    IRFF322, Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    irff323

    Abstract: IRFF322 8 A diode
    Text: HST FIELD EFFECT POWER TRANSISTOR IRFF322,323 2.0 AMPERES 400, 350 VOLTS RDS ON = 2.5 ft Preliminary This series of N -C h a n n e l E n h a n c e m e n t-m o d e P ow er M O SFETs utilizes G E ’s advanced Power D M O S technology to achieve low on-resistance with excellent device rugged­


    OCR Scan     		PDF IRFF322 IRFF323 8 A diode

    DM 321

    Abstract: F320 IRFF320 IRFF321 IRFF322 IRFF323
    Text: 1ÛE-D SILICONIX INC Û254735 0014017 4 • IRFF320/321/322/323 • □ r"StlÌCG S ilic o n_ ix J lM ■ in ii c o rp o ra te d N-Channel Enhancement Mode Transistors T - 3 R -O ^ TO-2Q5AF BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V BR|DSS IRFF320 " V Id (A


    OCR Scan     		PDF 25H735 RFF320/3217322/323 IRFF320 IRFF321 IRFF322 IRFF323 O-205AF FF321 FF322 IRFF32 DM 321 F320