IRFD312R Search Results

Contextual Info: IRFD312R Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)300m# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)1.2# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.0# Minimum Operating Temp (øC)-55õ

IRFD313R

Abstract: IRFD310R IRFD311R IRFD312R IRF0312
Contextual Info: _ Rugged Power MOSFETs File N u m b er 2039 IRFD310R, IRFD311R, IRFD312R, IRFD313R Avalanche Energy Rated N-Channel Power MOSFETs 0.3A and 0.4A, 350V-400V rDs on = 3.6fi and 5.0Q N-CHANNEL ENHANCEMENT MODE Features: • ■ ■ ■

irf460 to-247

Abstract: IRF450R IRF331R IRF460 IRF840R IRF341R irf362 IRFP450R THOMSON DISTRIBUTOR 58e d irfp462
Contextual Info: THOnSON/ DISTRIBUTOR Power MOSFETs SflE D • T02bñ73 0G0S711 bST ■ T C S K - _ _ Rugged-Series Power MOSFETs — N-Channel continued Package ft JP Maximum Ratinas BV d s S (V) ■d s (A) 'DS(O N) OHMS eAS (mj) 350

Contextual Info: • 43 025 71 0 0 5 4 1 2 0 237 ■ S3 HARRIS HAS IR F D 3 1 0 /3 1 1 /3 1 2 /3 1 3 ÌRFD31 O R /311R /312R /313R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 19 91 Package Features 4-PIN DIP TOP VIEW • 0.3A and 0.4A, 350V - 400V • roS on = 3-6 fl ancl 5-o fl

fd312

Abstract: fd 312 s
Contextual Info: 21 H A R R IS IRFD310/ 311/ 312/313 IRFD31OR/311R/312R/313R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features 4 -P IN DIP TOP VIEW • 0.3A and 0.4A, 350V - 400V • i'DS on = 3.6H and 5 .0 0 • Single Pulse Avalanche Energy Rated*