IRFD024 Search Results

IRF0110

Abstract: IRF0120 IRFD9123 irfu320 THOMSON DISTRIBUTOR 58e d IRFD113 IRFD1Z0 IRFD9014 IRFU121 irfu310
Contextual Info: THOMSON/ DISTRIBUTOR SÄE I • 1ClEbB73 0 0 0 S 8 0 0 International io n Rectifier 7SS ■ HEXFET Power MOSFETs Plastic Insertable Package HEXDIP N-Channel Vqs Drain Source Voltage Volts) Part Number IRFD015 IRFD014 IRFD025 IRFD024 IRFD1Z3 IRFD113 IRFD123

IRFD024

Contextual Info: IRFD024, SiHFD024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • For Automatic Insertion 0.10 Available RoHS* Qg (Max.) (nC) 25 • End Stackable Qgs (nC) 5.8 • 175 °C Operating Temperature

irfd024

Contextual Info: PD - 9.699B IRFD024 Absolute Maximum Ratings Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 2.5 ID @ TA = 100°C 1.8 IDM Continuous Drain Current, VGS @ 10V Pulsed Drain Current PD @TA = 25°C Power Dissipation 1.3 W VGS 0.0083 1.6

marking dut

Abstract: P-CHANNEL isd xxxx
Contextual Info: PD- 95933 IRFD024PbF • Lead-Free www.irf.com 1 10/27/04 IRFD024PbF 2 www.irf.com IRFD024PbF www.irf.com 3 IRFD024PbF 4 www.irf.com IRFD024PbF www.irf.com 5 IRFD024PbF 6 www.irf.com IRFD024PbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations

IRFD024

Abstract: ls 2466
Contextual Info: IRFD024, SiHFD024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • For Automatic Insertion 0.10 Available RoHS* Qg (Max.) (nC) 25 • End Stackable Qgs (nC) 5.8 • 175 °C Operating Temperature

IRFD024

Contextual Info: PD - 9699C IRFD024 Absolute Maximum Ratings Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 2.5 ID @ TA = 100°C 1.8 IDM Continuous Drain Current, VGS @ 10V Pulsed Drain Current PD @TA = 25°C Power Dissipation 1.3 W VGS 0.0083 +/-20

Contextual Info: International i» r Rectifier MÛSS4S2 GD1S01G 4b2 • INR PD-9.699A IRFD024 INTERNATIONAL RECTIFIER HEXFET Power M O S FE T Dynamic dv/dt Rating For Automatic Insertion End Stackable 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements

IRFD024

Abstract: SiHFD024
Contextual Info: IRFD024, SiHFD024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Available • For Automatic Insertion 0.10 RoHS* Qg (Max.) (nC) 25 • End Stackable Qgs (nC) 5.8 • 175 °C Operating Temperature

Contextual Info: PD - 9699C IRFD024 Absolute Maximum Ratings Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 2.5 ID @ TA = 100°C 1.8 IDM Continuous Drain Current, VGS @ 10V Pulsed Drain Current PD @TA = 25°C Power Dissipation 1.3 W VGS 0.0083 +/-20

IRFD024

Abstract: OA 91 diode
Contextual Info: International S Rectifier PD-9.699A IRFD024 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating For Automatic Insertion End Stackable 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V dss - 6 0 V

Contextual Info: IRFD024, SiHFD024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • For Automatic Insertion 0.10 Available RoHS* Qg (Max.) (nC) 25 • End Stackable Qgs (nC) 5.8 • 175 °C Operating Temperature

C294

Abstract: 1RFD024
Contextual Info: PD - 9.699A International IGR Rectifier IRFD024 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating For Automatic Insertion End Stackable 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V dss = 60V

IRFD024

Contextual Info: IRFD024, SiHFD024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Available • For Automatic Insertion 0.10 RoHS* Qg (Max.) (nC) 25 • End Stackable Qgs (nC) 5.8 • 175 °C Operating Temperature

irf0014

Abstract: IRF09014 IRF0220 IRF0024 IRF09120 INTERNATIONAL RECTIFIER 9439 IRFD110 IRF0110 INTERNATIONAL RECTIFIER 9516 irf09024
Contextual Info: PLASTIC PACKAGE HEXFETs ~ INTERNATIONAL SbE RECT IFIER D INTERNATIONAL r e c t i f i e r IOR 4äSSM55 0010554 1 • HEXDIpTM Package N-CHANNEL Typos Vos R d S ON (max) Ip cont >0M Pd TC - 25°C pulsed max A W Sì IRFD024 ' IRFD02S IRF0014 IRFQ015 60 IRFD123

AN609

Abstract: IRFD024
Contextual Info: IRFD024_RC, SiHFD024_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

1RFD024

Abstract: IRFD024 DR17 UT-12V
Contextual Info: International i “r Rectifier PD-9.699A IRFD024 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating For Automatic Insertion End Stackable 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V d ss - 60V

IRFD024PBF

Abstract: IRFD120
Contextual Info: PD- 95933A IRFD024PbF • Lead-Free ± 20 www.irf.com 1 08/25/05 IRFD024PbF 2 www.irf.com IRFD024PbF www.irf.com 3 IRFD024PbF 4 www.irf.com IRFD024PbF www.irf.com 5 IRFD024PbF 6 www.irf.com IRFD024PbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations

IRFD120

Abstract: IRFD024PBF
Contextual Info: PD- 95933A IRFD024PbF • Lead-Free ± 20 1 IRFD024PbF 2 IRFD024PbF Hexdip Package Outline Dimensions are shown in millimeters inches Hexdip Part Marking Information THIS IS AN IRFD120 INTERNAT IONAL RECT IF IER LOGO PART NUMBER IRFD120 XXXX AS S EMBLY LOT CODE

SiHFD024

Contextual Info: IRFD024, SiHFD024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Available • For Automatic Insertion 0.10 RoHS* Qg (Max.) (nC) 25 • End Stackable Qgs (nC) 5.8 • 175 °C Operating Temperature

Contextual Info: IRFD024, SiHFD024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • For Automatic Insertion 0.10 Available RoHS* Qg (Max.) (nC) 25 • End Stackable Qgs (nC) 5.8 • 175 °C Operating Temperature

Contextual Info: IRFD024 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V) I(D) Max. (A)2.5 I(DM) Max. (A) Pulsed I(D)1.8 @Temp (øC)100 IDM Max (@25øC Amb)20 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.3 Minimum Operating Temp (øC)-55õ

Contextual Info: PD - 9699C IRFD024 Absolute Maximum Ratings Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 2.5 ID @ TA = 100°C 1.8 IDM Continuous Drain Current, VGS @ 10V Pulsed Drain Current PD @TA = 25°C Power Dissipation 1.3 W VGS 0.0083 +/-20

Contextual Info: PD- 95933A IRFD024PbF • Lead-Free ± 20 Document Number: 91126 08/25/05 www.vishay.com 1 IRFD024PbF Document Number: 91126 www.vishay.com 2 IRFD024PbF Document Number: 91126 www.vishay.com 3 IRFD024PbF Document Number: 91126 www.vishay.com 4 IRFD024PbF Document Number: 91126

S10 diode

Abstract: IRFD024 VISHAY MARKING S10
Contextual Info: IRFD024, SiHFD024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • For Automatic Insertion 0.10 Available RoHS* Qg (Max.) (nC) 25 • End Stackable Qgs (nC) 5.8 • 175 °C Operating Temperature