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    IRF7452QPBF Price and Stock

    International Rectifier IRF7452QPBF

    HEXFET POWER MOSFET Power Field-Effect Transistor, 4.5A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
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    IRF7452QPBF Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF7452QPBF
    		International Rectifier HEXFET Power MOSFET Original PDF

    IRF7452QPBF Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: PD - 96113A IRF7452QPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free Description These HEXFET® Power MOSFET's in SO-8


    Original     		6113A IRF7452QPbF EIA-481 EIA-541. PDF

    EIA-541

    Abstract: F7101 IRF7101
    Contextual Info: PD - 96113A IRF7452QPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free Description These HEXFET® Power MOSFET's in SO-8


    Original     		6113A IRF7452QPbF EIA-481 EIA-541. EIA-541 F7101 IRF7101 PDF

    Contextual Info: PD - 96113 IRF7452QPbF SMPS MOSFET HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free Description


    Original     		IRF7452QPbF EIA-541. PDF