IRF62 Search Results

Contextual Info: IRF620S, SiHF620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching

IRF620

Abstract: IRF620FP
Contextual Info: IRF620 IRF620FP N-CHANNEL 200V - 0.6Ω - 6A TO-220/FP PowerMesh II MOSFET TYPE IRF620 IRF620FP • ■ ■ ■ ■ VDSS RDS on ID 200 V 200 V < 0.8 Ω < 0.8 Ω 6A 6A TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK

Contextual Info: PD - 95626 IRF624PbF • Lead-Free Document Number: 91029 8/3/04 www.vishay.com 1 IRF624PbF Document Number: 91029 www.vishay.com 2 IRF624PbF Document Number: 91029 www.vishay.com 3 IRF624PbF Document Number: 91029 www.vishay.com 4 IRF624PbF Document Number: 91029

Contextual Info: PD - 94870 IRF620PbF • Lead-Free 12/5/03 Document Number: 91027 www.vishay.com 1 IRF620PbF Document Number: 91027 www.vishay.com 2 IRF620PbF Document Number: 91027 www.vishay.com 3 IRF620PbF Document Number: 91027 www.vishay.com 4 IRF620PbF Document Number: 91027

Contextual Info: IRF620, SiHF620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 14 • Fast Switching Qgs (nC) 3.0 • Ease of Paralleling 7.9 • Simple Drive Requirements Qgd (nC)

IRF6215

Contextual Info: PD - 91479B IRF6215 HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -150V RDS on = 0.29Ω G ID = -13A S Fifth Generation HEXFETs from International Rectifier

Contextual Info: IRF624A A d van ced Power MOSFET FEATURES B V DSS - 250 V ^D S o n = 1 .1 £2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = ♦ Improved Gate Charge 4 .1 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|^A(Max.) @ V DS = 250V

IRF621

Abstract: IRF620
Contextual Info: ZETEX SEMICONDUCTORS *JS]> D •=1=170570 OOOSSbS 3 ■ 95D 0 5 5 6 5 3 ^* 7/ IRF620 IRF621 IRF622 IRF623 N-channel enhancement mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

irf6217trpbf

Abstract: AN 9525.2
Contextual Info: PD - 95252 SMPS MOSFET IRF6217PbF HEXFET Power MOSFET Applications Reset Switch for Active Clamp Reset DC to DC converters l Lead-Free VDSS l Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design See

D84CN2

Abstract: IRF620 RF620
Contextual Info: PUF IRF620.621 D84CN2.M2 5 AMPERES 200,150 VOLTS Rd s (ON = 0.8 n FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

IRF622

Abstract: IRF623 IRF622 ge Ge 2sa IDM-16
Contextual Info: IFSMm-ßKS FUT FIELD EFFECT POWER TRANSISTOR IRF622,623 4 AMPERES 200,150 VOLTS Rd S(ON = 1-2« This series of N-Channel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

IRF620 application

Abstract: IRF620
Contextual Info: IRF620 IRF620FP N-channel 200V - 0.6Ω - 6A TO-220/TO-220FP PowerMESH II Power MOSFET General features Type VDSS @Tjmax RDS(on) ID IRF620 200V <0.8Ω 6A IRF620FP 200V <0.8Ω 6A • Extremely high dv/dt capability ■ 100% avalanche tested ■ New high voltage benchmark

Contextual Info: PD - 91643 International IGR Rectifier IRF6215S/L HEXFET Power MOSFET • • • • • • • A dvanced Process Technology Surface Mount IRF6215S Low-profile through-hole (IRF6215L) 1 7 5 °C O perating Tem perature Fast Switching P-Channel Fully Avalanche Rated

Contextual Info: P D -9 1 4 7 9 B International Iör Rectifier IRF6215 HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated Description V dss = •"! 50V RüS on = 0.29Î2

IRF624A

Contextual Info: IRF624A Advanced Power MOSFET FEATURES BVDSS = 250 V ♦ Avalanche Rugged Technology RDS on = 1.1 Ω ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ID = 4.1 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-220 ♦ Lower Leakage Current : 10 µA (Max.) @ VDS = 250V

IRF620 application

Abstract: IRF620 IRF620FP JESD97 Part Marking TO-220 STMicroelectronics
Contextual Info: IRF620 IRF620FP N-channel 200V - 0.6Ω - 6A TO-220/TO-220FP PowerMESH II Power MOSFET General features Type VDSS @Tjmax RDS(on) ID IRF620 200V <0.8Ω 6A IRF620FP 200V <0.8Ω 6A • Extremely high dv/dt capability ■ 100% avalanche tested ■ New high voltage benchmark

IRF620

Contextual Info: IRF620 IRF620FP N-CHANNEL 200V - 0.6Ω - 6A TO-220/FP PowerMesh II MOSFET TYPE IRF620 IRF620FP • ■ ■ ■ ■ VDSS RDS on ID 200 V 200 V < 0.8 Ω < 0.8 Ω 6A 6A TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK

IRF624B

Abstract: IRFS624B IRF series
Contextual Info: IRF624B/IRFS624B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

AN1001

Abstract: IRF6218
Contextual Info: PD - 95862 IRF6218 SMPS MOSFET HEXFET Power MOSFET VDSS Applications Reset Switch for Active Clamp Reset DC-DC converters RDS on max -150V 150m:@VGS = -10V l Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including

IRF6218

Abstract: AN1001 marking code 27a
Contextual Info: PD - 95862 IRF6218 SMPS MOSFET HEXFET Power MOSFET VDSS Applications Reset Switch for Active Clamp Reset DC-DC converters RDS on max -150V 150m:@VGS = -10V l Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including

IRF620A

Contextual Info: IRF620A Advanced Power M O SFET FEATURES — 200 V R u g g e d G a te O x id e T e c h n o lo g y ^ D S o n = 0.8 £2 • L o w e r In p u t C a p a c ita n c e lD = 5 A ■ Im p ro v e d G a te C h a rg e D S S ■ A v a la n c h e ■ R u g g e d T e c h n o lo g y

Contextual Info: PD - 95132 IRF6215S/LPbF • Lead-Free www.irf.com 1 4/21/05 IRF6215S/LPbF 2 www.irf.com IRF6215S/LPbF www.irf.com 3 IRF6215S/LPbF 4 www.irf.com IRF6215S/LPbF www.irf.com 5 IRF6215S/LPbF 6 www.irf.com IRF6215S/LPbF www.irf.com 7 IRF6215S/LPbF D2Pak Package Outline

Contextual Info: PD - 91479B IRF6215 HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -150V RDS on = 0.29Ω G ID = -13A S Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD - 94817 IRF6215PbF Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -150V RDS on = 0.29Ω G Description ID = -13A S Fifth Generation HEXFETs from International Rectifier