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    IRF61 Price and Stock

    Vishay Siliconix IRF610PBF-BE3

    MOSFET N-CH 200V 3.3A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF610PBF-BE3 Tube 5,634 1
    • 1 $1.32
    • 10 $1.32
    • 100 $1.32
    • 1000 $0.39059
    • 10000 $0.30023
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    Vishay Siliconix IRF614SPBF

    MOSFET N-CH 250V 2.7A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF614SPBF Tube 800 1
    • 1 $2.46
    • 10 $1.583
    • 100 $2.46
    • 1000 $0.8673
    • 10000 $0.8673
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    Bristol Electronics IRF614SPBF 650
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    Vishay Siliconix IRF610STRLPBF

    MOSFET N-CH 200V 3.3A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF610STRLPBF Cut Tape 677 1
    • 1 $2.46
    • 10 $1.583
    • 100 $2.46
    • 1000 $2.46
    • 10000 $2.46
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    IRF610STRLPBF Digi-Reel 677 1
    • 1 $2.46
    • 10 $1.583
    • 100 $2.46
    • 1000 $2.46
    • 10000 $2.46
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    IRF610STRLPBF Reel 800
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.81923
    • 10000 $0.69875
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    Vishay Siliconix IRF610SPBF

    MOSFET N-CH 200V 3.3A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF610SPBF Tube 299 1
    • 1 $2.46
    • 10 $2.46
    • 100 $2.46
    • 1000 $0.79831
    • 10000 $0.69875
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    Rochester Electronics LLC IRF613

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF613 Bulk 919
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    • 1000 $0.33
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    IRF61 Datasheets (170)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF610 Fairchild Semiconductor 3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET Original PDF
    IRF610 Harris Semiconductor Power MOSFET Selection Guide Original PDF
    IRF610 Intersil 3.3A, 200V, 1.500 ?, N-Channel Power MOSFET Original PDF
    IRF610 Texas Instruments High-Speed CMOS Logic Quad D-Type Flip-Flop with Reset Original PDF
    IRF610 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF610 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 3.3A TO-220AB Original PDF
    IRF610 Fairchild Semiconductor N-Channel Power MOSFETs, 3.5A, 150-200V Scan PDF
    IRF610 FCI POWER MOSFETs Scan PDF
    IRF610 Frederick Components Power MOSFET Selection Guide Scan PDF
    IRF610 General Electric Power Transistor Data Book 1985 Scan PDF
    IRF610 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 2.5A. Scan PDF
    IRF610 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF610 International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 200V, 3.3A, Pkg Style TO-220AB Scan PDF
    IRF610 International Rectifier HEXFET Power MOSFET Scan PDF
    IRF610 International Rectifier TO-220 N-Channel HEXFET Power MOSFET Scan PDF
    IRF610 Intersil Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, N Channel, 200V, 3.3A, Pkg Style TO220AB Scan PDF
    IRF610 Motorola Switchmode Datasheet Scan PDF
    IRF610 Motorola European Master Selection Guide 1986 Scan PDF
    IRF610 Motorola TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39 Scan PDF
    IRF610 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    ...

    IRF61 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    power MOSFET IRF610

    Abstract: No abstract text available
    Text: IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling 4.5 • Simple Drive Requirements Qgd (nC)


    Original     		PDF IRF610, SiHF610 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 power MOSFET IRF610

    IRF614

    Abstract: No abstract text available
    Text: IRF614, SiHF614 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling Qgd (nC) 4.5 • Simple Drive Requirements Configuration


    Original     		PDF IRF614, SiHF614 O-220 O-220 18-Jul-08 IRF614

    irf 2203

    Abstract: IRF610B_FP001 IRF*_FP001 IRF 870 irf 146
    Text: IRF610B/IRFS610B IRF610B/IRFS610B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRF610B/IRFS610B IRF610B O-220-3 FP001 irf 2203 IRF610B_FP001 IRF*_FP001 IRF 870 irf 146

    IRF614

    Abstract: No abstract text available
    Text: $GYDQFHG 3RZHU 026 7 IRF614 FEATURES BVDSS = 250 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 2.0Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 2.8 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V


    Original     		PDF IRF614 O-220 IRF614

    intersil irf610

    Abstract: IRF610 TB334 power MOSFET IRF610
    Text: IRF610 Data Sheet June 1999 3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of


    Original     		PDF IRF610 TA17442. intersil irf610 IRF610 TB334 power MOSFET IRF610

    IRF610

    Abstract: MOSFET dynamic irf610pbf power MOSFET IRF610
    Text: IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling 4.5 • Simple Drive Requirements Qgd (nC)


    Original     		PDF IRF610, SiHF610 2002/95/EC O-220AB O-220AB 11-Mar-11 IRF610 MOSFET dynamic irf610pbf power MOSFET IRF610

    Untitled

    Abstract: No abstract text available
    Text: IRF610S, SiHF610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single DESCRIPTION D D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRF610S, SiHF610S 2002/95/EC O-263) 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRF614S, SiHF614S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching


    Original     		PDF IRF614S, SiHF614S 2002/95/EC O-263) 11-Mar-11

    IRFS614B

    Abstract: IRF614B
    Text: IRF614B/IRFS614B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRF614B/IRFS614B O-220 IRFS614B IRF614B

    Untitled

    Abstract: No abstract text available
    Text: IRF610S, SiHF610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single DESCRIPTION D D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRF610S, SiHF610S O-263) 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    IRF610

    Abstract: power MOSFET IRF610 IRF611 irf610 mosfet irf612
    Text: IRF610, IRF611, IRF612, IRF613 S E M I C O N D U C T O R 2.6A and 3.3A, 150V and 200V, 1.5 and 2.4 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 2.6A and 3.3A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF IRF610, IRF611, IRF612, IRF613 TA17442. IRF610 power MOSFET IRF610 IRF611 irf610 mosfet irf612

    EIA-541

    Abstract: IRF6100 4.5v to 100v input regulator
    Text: PD - 93930A IRF6100 HEXFET Power MOSFET l l l l l l Ultra Low RDS on per Footprint Area Low Thermal Resistance P-Channel MOSFET One-third Footprint of SOT-23 Super Low Profile (<.8mm) Available Tested on Tape & Reel VDSS RDS(on) max ID -20V 0.065Ω@VGS = -4.5V


    Original     		PDF 3930A IRF6100 OT-23 EIA-481 EIA-541. 5M-1994. EIA-541 IRF6100 4.5v to 100v input regulator

    MOSFET 200v 20A n.channel

    Abstract: IRF614 TB334
    Text: IRF614 2.0A, 250V, 2.0 Ohm, N-Channel Power MOSFET January 1998 Features Description • 2.0A, 250V • Linear Transfer Characteristics This is an N-Channel enhancement mode silicon gate power field effect transistor. It is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified


    Original     		PDF IRF614 TA17443 MOSFET 200v 20A n.channel IRF614 TB334

    Untitled

    Abstract: No abstract text available
    Text: IRF614S, SiHF614S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) () VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D D2PAK (TO-263) • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount


    Original     		PDF IRF614S, SiHF614S 2002/95/EC O-263) 18-Jul-08

    IRF610

    Abstract: IRF612 irf P 611 IRF610-613 IRF611 IRF613 MTP2N18 MTP2N20
    Text: 3469674 FAIRCHILD SEMICONDUCTOR ? IRF610-613 r~ 3 ? -d ? MTP2N18/2N20 N-ChdnflGl POWST ft/IOSFETSj 3.5 A, 150-200 V b h m b f a ir c h il d A Schlumberger Company Power And Discrete Division TO-220AB Description These devices are n-channel, enhancement mode, power


    OCR Scan     		PDF IRF610-613 MTP2N18/2N20 O-22QAB IRF610 IRF611 IRF612 IRF613 MTP2N18 NITP2N20 IRF610/612 IRF610 IRF612 irf P 611 IRF611 IRF613 MTP2N18 MTP2N20

    IRF610

    Abstract: power MOSFET IRF610 33a marking
    Text: International S Rectifier P D -9.3261 IRF610 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 200V R DS on = 1 lD = 3.3A Description DATA SH EETS


    OCR Scan     		PDF IRF610 O-220 IRF610 power MOSFET IRF610 33a marking

    Untitled

    Abstract: No abstract text available
    Text: IRF614S A d van ced Power MOSFET FEATURES B V DSS - 250 V ^D S o n = 2 . 0 Q. ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology 00 c\i Q II ♦ Lower Input Capacitance A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 250V


    OCR Scan     		PDF IRF614S

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E D • 7 ^ b 4 m 2 GG17273 217 «SPIGK N-CHANNEL POWER MOSFETS IRF614/615 FEATURES • • • • • • • Lower R d s ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance


    OCR Scan     		PDF GG17273 IRF614/615 IRF614 IRF615 IBF615

    IRF013

    Abstract: D33A power MOSFET IRF610 1RF610 irf610 samsung irf610 mosfet IRF61Q irf610 613 33A
    Text: N-CHANNEL POWER MOSFETS IRF610/611/612/613 FEATURES TO-220 • Lower R d s ON • Improved inductive ruggedness • Fast switching times • • • • Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan     		PDF IRF610/611/612/613 O-220 IRF610 IRF611 IRF612 IRF613 IRF013 D33A power MOSFET IRF610 1RF610 irf610 samsung irf610 mosfet IRF61Q 613 33A

    IRF610A

    Abstract: No abstract text available
    Text: IRF610A Advanced Power M O SFET FEATURES D S S • L o w e r In p u t C a p a c ita n c e ■ Im p ro v e d G a te C h a rg e ^ D S o n = ■ E x te n d e d S a fe O p e ra tin g A re a ■ L o w e r L e a k a g e C u rre n t : 10 |jA (M a x .) @ M Low


    OCR Scan     		PDF IRF610A O-220 IRF610A

    IRF614A

    Abstract: No abstract text available
    Text: IRF614A A dvanced Power MOSFET FEATURES B V DSS — 2 5 0 V ♦ Avalanche Rugged Technology ♦ Lower Input Capacitance _Q 00 evi ^DS on = II ♦ Rugged Gate Oxide Technology 2 .0 a A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 250V


    OCR Scan     		PDF IRF614A IRF614A

    Untitled

    Abstract: No abstract text available
    Text: IRF614A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BV0SS = 250 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 m A Max. @ VDS= 250V


    OCR Scan     		PDF IRF614A Ran06

    Untitled

    Abstract: No abstract text available
    Text: IRF610A Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current . 10 nA{M ax. BV,DSS 200 V ^D S o n ) =


    OCR Scan     		PDF IRF610A

    Untitled

    Abstract: No abstract text available
    Text: IRF610A Advanced Power MOSFET FEATURES b v dss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 m A Max @ VDS= 200V = 200 V


    OCR Scan     		PDF IRF610A