IPD042P03L3 Search Results
IPD042P03L3 Price and Stock
Infineon Technologies AG IPD042P03L3GATMA1MOSFETs TRENCH <= 40V |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
IPD042P03L3GATMA1 | 20,856 |
|
Buy Now | |||||||
![]() |
IPD042P03L3GATMA1 | 6,205 | 36 |
|
Buy Now | ||||||
![]() |
IPD042P03L3GATMA1 | 731 |
|
Buy Now | |||||||
Infineon Technologies AG IPD042P03L3GPOWER FIELD-EFFECT TRANSISTOR, 70A I(D), 30V, 0.0068OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252 |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
IPD042P03L3G | 731 |
|
Buy Now |
IPD042P03L3 Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
---|---|---|---|---|---|---|
IPD042P03L3 G |
![]() |
P-Channel MOSFETs; Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): -30.0 V; RDS (on) (max) (@10V): 4.2 mOhm; RDS (on) (max) (@4.5V): 6.8 mOhm; RDS (on) (max) (@2.5V): -; | Original | |||
IPD042P03L3GATMA1 |
![]() |
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 30V 70A TO252-3 | Original | |||
IPD042P03L3GBTMA1 |
![]() |
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 30V 70A TO252-3 | Original |
IPD042P03L3 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
042p03lContextual Info: IPD042P03L3 G OptiMOSTM P3 Power-Transistor Product Summary Features V DS • single P-Channel Logic Level R DS(on),max • Enhancement mode • Qualified according JEDEC 1) for target applications -30 V V GS = 10V 4.2 mΩ V GS = 4.5V 6.8 ID -70 A • 175 °C operating temperature |
Original |
IPD042P03L3 PG-TO252-3 042P03L 042p03l | |
042P03L
Abstract: IPD042P03L3 G Package PG-TO252-3 Marking 042P03L IPD042P03L3 JESD22 JESD22-A114 IPD042P03L3 G
|
Original |
IPD042P03L3 PG-TO252-3 042P03L 042P03L IPD042P03L3 G Package PG-TO252-3 Marking 042P03L JESD22 JESD22-A114 IPD042P03L3 G | |
042P03LContextual Info: IPD042P03L3 G OptiMOSTM P3 Power-Transistor Product Summary Features VDS • single P-Channel Logic Level RDS(on),max • Enhancement mode • Qualified according JEDEC1) for target applications -30 V VGS = 10V 4.2 mW VGS = 4.5V 6.8 ID -70 A • 175 °C operating temperature |
Original |
IPD042P03L3 PG-TO252-3 IEC61249-2-21 042P03L 042P03L | |
igbt welding machine scheme
Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
|
Original |
||
PX3544
Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
|
Original |
lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J | |
TLE4957C
Abstract: SLE66R35E7 SAK-XC2060M-104F80L AA ESD204 SAF-XC2268M-72F66L AA xc2336 tle7242 TLE5041 2EDL23N06 BTN7970
|
Original |