K4505
Abstract: 1601l 4Kx4 SRAM MK48T87B Z30A SRAM 2kx8 sram IMS1630 256KX1 MK41S80
Text: ALPHANUMERICAL INDEX unless otherwise specified all Static RAMs listed are produced in CMOS technology Part Nuraöer Organization 4Kx1 IMS1203 ( 4Kx1 IMS1203M , 1Kx4 IMS1223 1Kx4 IMS1223M ' 16Kx1 IMS1400M 16Kx1 IMS1403 ' IMS1403M/LM f 16Kx1 IM S1420M A 4Kx4
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IMS1203
IMS1203M
IMS1223
IMS1223M
16Kx1
IMS1400M
IMS1403
IMS1403M/LM
K4505
1601l
4Kx4 SRAM
MK48T87B
Z30A
SRAM
2kx8 sram
IMS1630
256KX1
MK41S80
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S1403M
Abstract: No abstract text available
Text: IMS1403M IMS1403LM • ■ ■ ■ ■ ■ ■ ■ C M O S ■ ■ ■ ■ i i n i m UU U M H ig h n g 1 ^ K J O ^ P e rfo rm a n c e S ta tic R A M M IL -S T D -8 8 3 C FEATURES DESCRIPTION • INMOS1Very High Speed CMOS • Advanced Process -1 .6 Micron Design Rules
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IMS1400M
20-Pin,
300-mil
IMS1403M
1403M
1403LM
IMS1403M/1403LM
S1403M
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IMS1400M
Abstract: IMS1403LM IMS1403M IMS1403M-45 16kx1 static ram IMS1400
Text: IMS1403M IMS1403LM CMOS High Performance 16K x 1 Static RAM MIL-STD-883C FEATURES DESCRIPTION • INMOS1Very High Speed CM OS • Advanced Process -1 .6 Micron Design Rules • Specifications guaranteed over full military temperature range -55° C to +125° C
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IMS1403M
IMS1403LM
16Kx1
MIL-STD-883C
IMS1400M
20-Pin,
300-mil
IMS1403M/IMS1403LM
IMS1400M
IMS1403LM
IMS1403M-45
16kx1 static ram
IMS1400
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IMS1403P-55
Abstract: B 1403 N s1403 IMS1403P-25 TWL01 IMS1403LM IMS1403M IMS1403P-35 IMS1403S-25 IMS1403S-35
Text: IMS1403 CMOS High Performance 16K x 1 Static RAM o^m os1 D E S C R IP T IO N FEATURES • • • • • • • • • • • The INMOS 1MS1403 is a high performance 16K x 1 CMOS Static RAM. The IMS1403 provides maximum density and speed enhancements with the additional
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IMS1403
20-Pin,
300-mil
20-Pin
1MS1403
IMS1403
IMS1403P-55
B 1403 N
s1403
IMS1403P-25
TWL01
IMS1403LM
IMS1403M
IMS1403P-35
IMS1403S-25
IMS1403S-35
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MKB6116
Abstract: MKB4501 IMS1630 RAM MK6116 MK48Z18BU IMS1420 MK48Z02BU
Text: SELECTION GUIDE ZEROPOW ERS ORGANISATION DESCRIPTION PART NUMBER ICCma SPEEDns ACTIVE TTL mA@ns STBY CMOS STBY VCC TEMP RANGE PACKAGE -2 K X 8 MK48Z02 120,150,200,250 90 3 1 5V + 10 -5% 0 to + 70°C P DIP 24 -2 K X 8 UL-CERTIFIED MK48Z02BU 120,150,200,250
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32KX8
MK48Z32
MK48Z30A
MK48Z30
MK48Z19BU
MK46Z19
MK48Z09BU
MK48Z02
MK48Z02BU
MK48Z12
MKB6116
MKB4501
IMS1630
RAM MK6116
MK48Z18BU
IMS1420
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ic 7483 pin configuration diagram
Abstract: Power Distribution Board with line diagram with d
Text: IMS1403 CMOS High Performance 16K x 1 Static RAM anm os’ DESCRIPTION FE A T U R E S • INMOS' Very High Speed CMOS •Advanced Process -1.6 Micron Design Rules • 16K x 1 Bit Organization • 2 5,35,45 and 55 nsec Access Times • Fully T TL Compatible
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IMS1403
1MS1403
IMS1403
IMS1403M
IMS1403LM
MIL-STD-883
ic 7483 pin configuration diagram
Power Distribution Board with line diagram with d
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Untitled
Abstract: No abstract text available
Text: IMS1423M u m o CMOS High Performance 4K x 4 Static RAM MIL-STD-883C s DESCRIPTION FEATURES The IN M O S IM S 1423M is a high speed 4 K x 4 C M O S static R AM proce sse d in full com pliance to M ILS TD -883C . The IM S 1423M provides m axim um density a nd perform ance enha n cem e n ts to existing 16K a pp lica
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IMS1423M
MIL-STD-883C
1423M
-883C
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IMS1423
Abstract: IMS1420M IMS1423S-35M CZ 553
Text: IMS1423M CMOS High Performance 4K x 4 Static RAM MIL-STD-883C |Y |Q g * DESCRIPTION FEA TU R E S The IN M O S IM S 1423M is a high speed 4K x 4 C M O S static R AM processed in full com pliance to M ILSTD -883C . The IM S 1423M provides m axim um d ensity
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IMS1423M
MIL-STD-883C
20-Pin
IMS1420M
MIL-STD-883C.
IMS1423M
IMS1423
IMS1420M
IMS1423S-35M
CZ 553
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IMS1433
Abstract: 1403-LM ceramic pin grid array package lead finish gold IMS1400M IMS1403LM IMS1403M
Text: IM S 1 4 0 3 M IM S 1 4 0 3 L M CMOS High Performance 16K x 1 Static RAM MIL-STD-883C IT IO S D ESCR IPTIO N FEA TU R ES T h e IN M O S IM S 1 4 0 3M is a high speed 16K x 1 C M O S sta tic R A M processed in full co m plian ce to M IL-S TD -683C . T h e IM S 1403M provides m axim um
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IMS1403M
IMS1403LM
MIL-STD-883C
IMS1400M
20-Pin,
300-mil
IMS1403LS45M
IMS1403LN45M
IMS1403LS55M
IMS1433
1403-LM
ceramic pin grid array package lead finish gold
IMS1400M
IMS1403LM
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Untitled
Abstract: No abstract text available
Text: IM S 1 4 0 3 M IM S 1 4 0 3 L M CMOS High Performance ^ ^ ^ Static RAM MIL-STD-883C III I I I I U O FEATURES DESCRIPTION • INMOS’ Very High Speed CMOS • Advanced Process -1.6 Micron Design Rules • Specifications guaranteed over full military temperature range -55° C to +125° C
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MIL-STD-883C
IMS1400M
20-Pin,
300-mil
1MS1403M
S1403LN35M
IMS1403LS45M
IMS1403LN45M
IMS1403LS55M
IMS1403LN55M
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Untitled
Abstract: No abstract text available
Text: IMS1403 CMOS High Performance 16K x 1 Static RAM mos DES C R IPTIO N FEATURES • • • • • • • • • • • INMOS'Very High Speed CMOS Advanced Process -1 .6 Micron Design Rules 16Kx1 Bit Organization 25, 35, 45 and 55 nsec Access Times Fully TTL Compatible
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IMS1403
16Kx1
20-Pin,
300-mil
20-Pin
IMS1403
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