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    IGC109T120T6 Price and Stock

    Infineon Technologies AG IGC109T120T6RLX1SA2

    - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: IGC109T120T6RLX1SA2)
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    Avnet Americas IGC109T120T6RLX1SA2 Waffle Pack 111 Weeks 33
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    Infineon Technologies AG IGC109T120T6RMX1SA3

    - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: IGC109T120T6RMX1SA)
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    Avnet Americas IGC109T120T6RMX1SA3 Waffle Pack 111 Weeks 34
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    Infineon Technologies AG IGC109T120T6RHX1SA2

    - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: IGC109T120T6RHX1SA)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas IGC109T120T6RHX1SA2 Waffle Pack 111 Weeks 33
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    IGC109T120T6 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IGC109T120T6RH
    		Infineon Technologies IGBT Chips; Technology: IGBT 4 High Power; VDS (max): 1,200.0 V; IC (max): 110.0 A; VCE(sat) (max): 2.0 V; VGE(th) (min): 5.0 V; Original PDF
    IGC109T120T6RL
    		Infineon Technologies IGBT Chips; Technology: IGBT 4 Low Power; VDS (max): 1,200.0 V; IC (max): 110.0 A; VCE(sat) (max): 2.05 V; VGE(th) (min): 5.0 V; Original PDF
    IGC109T120T6RM
    		Infineon Technologies IGBT Chips; Technology: IGBT 4 Medium Power; VDS (max): 1,200.0 V; IC (max): 110.0 A; VCE(sat) (max): 2.05 V; VGE(th) (min): 5.0 V; Original PDF

    IGC109T120T6 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: IGC109T120T6RL IGBT4 Low Power Chip Features: • 1200V Trench + Field stop technology • low switching losses • positive temperature coefficient • easy paralleling This chip is used for: • low / medium power modules C Applications: • low / medium power drives


    Original     		IGC109T120T6RL L7742C, PDF

    Contextual Info: IGC109T120T6RM IGBT4 Medium Power Chip Features: • 1200V Trench + Field stop technology • low switching losses • soft turn off • positive temperature coefficient • easy paralleling Chip Type VCE ICn IGC109T120T6RM 1200V 110A This chip is used for:


    Original     		IGC109T120T6RM IGC109T120T6RM L7742B, PDF

    Contextual Info: IGC109T120T6RM IGBT4 Medium Power Chip Features: • 1200V Trench + Field stop technology • low switching losses • soft turn off • positive temperature coefficient • easy paralleling Chip Type VCE ICn IGC109T120T6 RM 1200V 110A This chip is used for:


    Original     		IGC109T120T6RM IGC109T120T6 L7742B, PDF

    Contextual Info: IGC109T120T6RH IGBT4 High Power Chip Features: • 1200V Trench + Field stop technology • low VCE sat • soft turn off • positive temperature coefficient • easy paralleling Chip Type IGC109T120T6 RH VCE ICn 1200V 110A This chip is used for: • medium / high power modules


    Original     		IGC109T120T6RH IGC109T120T6 L7742A, PDF

    Contextual Info: IGC109T120T6RL IGBT4 Low Power Chip Features: • 1200V Trench + Field stop technology • low switching losses • positive temperature coefficient • easy paralleling This chip is used for: • low / medium power modules C Applications: • low / medium power drives


    Original     		IGC109T120T6RL IGC109T120T6 L7742C, PDF

    Contextual Info: IGC109T120T6RH IGBT4 High Power Chip Features: • 1200V Trench + Field stop technology • low VCE sat • soft turn off • positive temperature coefficient • easy paralleling Chip Type VCE ICn IGC109T120T6RH 1200V 110A This chip is used for: • medium / high power modules


    Original     		IGC109T120T6RH IGC109T120T6RH L7742 PDF