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    PM211

    Abstract: No abstract text available
    Text: 1-96 C8 IFP3306 P-CHANNEL SILICON ENHANCEMENT M O D E VERTICAL D M O S FET Absolute maximum ratings at TA = 25-C Vwtieal M o d * DM OS JD iLtí TO-39 SOT-23 Units 1 lD - 0 .1 6 o ^ ss Gate S o u r c e T h re sh o ld V oltage VGS lh D ra in S a tu ra tio n C u rre n t (Pu lse d)


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    PDF IFP3306 OT-23 PM211