IDT7188S Search Results

Contextual Info: CMOS STATIC RAM 64K 16K x 4-BIT IDT7188S IDT7188L Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed (equal access and cycle times) — Military: 2 0 /2 5 /3 5 /4 5 /5 5 /7 0 /8 5 n s (m ax.) — Com mercial: 15/2 0 /2 5 /3 5 n s (m ax.)

7188L35

Abstract: IDT7188 IDT7188L IDT7188S 2989
Contextual Info: IDT7188S IDT7188L CMOS STATIC RAM 64K 16K x 4-BIT Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle times) — Military: 25/35/45/55/70/85ns (max.) • Low power consumption • Battery backup operation — 2V data retention (L version

2989

Abstract: 7188L70 7188S25
Contextual Info: IDT7188S IDT7188L CMOS Static RAM 64K 16K x 4-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ innovative circuit design techniques, provides a cost effective approach for memory intensive applications. Access times as fast as 25ns are available. The IDT7188 offers a

Contextual Info: IDT7188S IDT7188L CMOS STATIC RAM 64K 16Kx 4-BIT Integrated Device Technology, Inc. FEATURES: • H igh-speed (equal access and cycle times) — Military: 25 /3 5 /4 5 /5 5 /7 0 /8 5 n s (m ax.) • Low power consumption • Battery backup operation — 2V data retention (L version

IDT7188

Abstract: IDT7188L IDT7188S 7188s20 2989
Contextual Info: IDT7188S IDT7188L CMOS STATIC RAM 64K 16K x 4-BIT Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle times) — Military: 20/25/35/45/55/70/85ns (max.) • Low power consumption • Battery backup operation — 2V data retention (L version

S0244

Contextual Info: INTEGRATE] DEVICE 5ÖE ]> • 4Û ES7 71 DDllS'IS 0b3 M I D T CMOS STATIC RAM 64 K 1 6K x 4-BIT) IDT7188S IDT7188L FEATURES: of-th e -a rt tech nology, com bin ed w ith innovative circuit design • H ig h -sp ee d (e q u a l acc e s s and cycle tim es)

DTM03

Contextual Info: CMOS STATIC RAM 64K 16Kx 4-BIT IDT7188S IDT7188L Integrated Device Technology, Inc. FEATURES: of-the-art technology, combined with innovative c irc u it design techniques, provides a cost effective approach for memory • High-speed (equal access and cycle times)

IDT7188

Abstract: IDT7188L IDT7188S
Contextual Info: IDT7188S IDT7188L CMOS STATIC RAM 64K 16K x 4-BIT Integrated Device Technology, Inc. of-the-art technology, combined with innovative circuit design techniques, provides a cost effective approach for memory intensive applications. Access times as fast as 20ns are available. The IDT7188

Contextual Info: BflE D INTEGRATE» DEVICE • MÔ5S771 DÜGÖ31Ö □ ■ IDT -W 6-2-3-I0 CMOS STATIC RAM 64K 16K x 4-BIT IDT7188S IDT7188L FEATURES: DESCRIPTION: • High-speed (equal access and cycle times) — Military: 20/25/35/45/55/70/85ns (max.) — Commercial: 15/20/25/35ns (max.)

7188s20

Abstract: 7188L 55AC10
Contextual Info: CMOS STATIC RAM 64K 16Kx 4-BIT IDT7188S IDT7188L Integrated D evice T ech n o lo gy, Inc. of-the-art technology, combined with innovative circuit design techniques, provides a cost effective approach for memory intensive applications. Access times as fast as 20ns are available. T h e ID T 7 188

IDT7188

Abstract: IDT7188L IDT7188S 7188 dip 2989
Contextual Info: IDT7188S IDT7188L CMOS Static RAM 64K 16K x 4-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ innovative circuit design techniques, provides a cost effective approach for memory intensive applications. Access times as fast as 25ns are available. The IDT7188 offers a

Contextual Info: CMOS STATIC RAM 64K 16K x 4-BIT IDT7188S IDT7188L Integrated Device T echnology, Inc. FEATURES: of-the-art technology, com bined w ith inno vative circuit design techniques, provides a cost effective ap proach for m em ory intensive applications. A ccess tim e s as fa st as 15ns are available. T h e ID T7188

Contextual Info: CMOS STATIC RAM 64K 16Kx 4-BIT IDT7188S IDT7188L Integrated D evice Technology, Inc. FEATURES: • High-speed (equal access and cycle times) — Military: 25/35/45/55/70/85ns (max.) • Low power consumption • Battery backup operation — 2V data retention (L version

Contextual Info: CMOS STATIC RAM 64K 16K x 4-BIT IDT7188S IDT7188L I n t e g r a t e d D e v ic e T e c h n o lo g y , I n c . FEATURES: DESCRIPTION: • High-speed (equal access and cycle times) — Military: 20/25/35/45/55/70/85ns (max.) — Commercial: 15/20/25/35ns (max.)

2989

Abstract: IDT7188S 7188L70 IDT7188 IDT7188L 7188S25
Contextual Info: CMOS Static RAM 64K 16K x 4-Bit IDT7188S IDT7188L Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ innovative circuit design techniques, provides a cost effective approach for memory intensive applications. Access times as fast as 25ns are available. The IDT7188 offers a

Contextual Info: i: jW 'N I d tj CMOS STATIC RAM 64K 16K x 4-BIT IDT7188S IDT7188L Integrated Device Technology, Inc. FEATURES: techniques, provides a cost effective approach for memory intensive applications. Access times as fast as 25ns are available. The IDT7188 offers areduced power standby mode, Isbi , which is activated

Contextual Info: IDT7188S IDT7188L CMOS STATIC RAM 64K 16K x 4-BIT Integrated Device Technology, Inc. FEATURES: of-th e -a rt tech nology, c om bin ed with in novative circuit design • H ig h -sp ee d (equal a cc e s s and cycle tim es) tech niq ues, provides a cost effective app ro a c h for m em ory

Contextual Info: IDT7188S IDT7188L CMOS STATIC RAM 64K 16K x 4-BIT Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle times) — Military: 25/35/45/55/70/85ns (max.) • Low power consumption • Battery backup operation — 2V data retention (L version

Contextual Info: CM O S STATIC RAM 64K 1 6 K x 4-BIT I ? 8? IDT7188L FEATURES: DESCRIPTION: • The ID T7188 Is a 6 5 ,5 3 6 -b lt h ig h -s p e e d sta tic RAM orga n ized as 16K x 4. It is fa b rica te d u sin g ID T's h ig h -p erform a n ce, hlghre lla b lllty te c h n o lo g y —C EM O S . T h is state-of-the-art tech n olo gy,

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

s484

Abstract: t dc s479
Contextual Info: I I N T E G R A T E D D E VI CE 14E D 4 Ö 2 S 77 1 0 0 Q 3 3 4 3 7 CMOS STATIC RAM 64K 16K x 4-BIT IDT 7188S IDT 7188L T - H b ' 1 3 ' l O FEATURES: • • High-speed (equal access and cycle times) - Military: 2 0 /2 5/30 /3 5 /4 5 /5 5 /7 0/85 n s (max.)

K6X0808C1D-BF55

Abstract: HY6264P AS6C1008-55SIN samsung p28 K6R4016V1D-UC10 as6c4008-55sin HYNIX IS61LV25616AL-10KLI GS71116AGP-10 uPD431000ACZ-70L
Contextual Info: cross_reference Density Organization Alliance Alliance Part Number Alliance Package Alliance Speed Samsung Samsung Part Number Cypress Cypress Part Number Cypress Package Cypress Package Code Cypress Speed IDT Part Number IDT Package IDT Package Code IDT Speed ISSI

DT 7188

Abstract: HY62C88-70 HY62C88L-35 HY62C88L-45 HY62C88L-55 HY62C88L-70 IDT7188L45 IDT7188L70 IDT7188L85
Contextual Info: - 70 6 4 K m tfc £ iâ&ïcffl CC TAAC •ax ns) TCAC max (ns) TOE max (ns) CMOS 7 X 4 TOH sin (ns) y / TOD nax (ns) TWP min (ns) S t a t i c [1 A M ( I 6 3 8 4 X 4 ) f t it TDS rain (ris) « T'WR max (ns) V D D or V C C I DD max (ns) TWD rain (ns) (V) (• A)

diode cross reference

Abstract: IDT6168LA55LB CY7C186A-45DMB IDT CROSS REFERENCE LOGIC CY7C128A-25DMB IDT71256L45L32B IDT6168LA70LB cross reference CY7C024-55AC CY7C433-25JC
Contextual Info: IDT/Cypress Product Cross Reference FIFOs FIFOs FIFOs CYPRESS IDT CYPRESS IDT CYPRESS CY7C419-10PC IDT7203L50P CY7C428-20PC IDT7205L50J CY7C460A-25JC IDT7200L12J CY7C419-10JC IDT7203L12P CY7C429-10PC IDT7206L15P CY7C462A-15PC IDT7200L15TP CY7C419-10PC IDT7203L12TP