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    IDT05S60C Search Results

    IDT05S60C Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IDT05S60C Infineon Technologies 2nd Generation thinQ! SiC Schottky Diode Original PDF
    IDT05S60CHKSA1 Infineon Technologies DIODE SCHOTTKY 600V TO220-2 Original PDF

    IDT05S60C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    d05s60c

    Abstract: IDT05S60C JESD22
    Text: IDT05S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 12 nC IF 5 A • No reverse recovery / No forward recovery • No temperature influence on the switching behavior


    Original     		PDF IDT05S60C PG-TO220-2-2 D05S60C d05s60c IDT05S60C JESD22

    D05S60C

    Abstract: No abstract text available
    Text: IDT05S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 12 nC IF 5 A • No reverse recovery / No forward recovery • No temperature influence on the switching behavior


    Original     		PDF IDT05S60C PG-TO220-2-2 IDT05S60C PG-TO220-2-2 D05S60C

    D05S60C

    Abstract: IDT05S60C JESD22 Tj-102
    Text: IDT05S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 12 nC IF 5 A • No reverse recovery / No forward recovery • No temperature influence on the switching behavior


    Original     		PDF IDT05S60C PG-TO220-2-2 D05S60C PG-TO220-2-2: D05S60C IDT05S60C JESD22 Tj-102

    Untitled

    Abstract: No abstract text available
    Text: IDT05S60C 2nd Generation thinQ! SiC Schottky Diode Features Product Summary V DC 600 V • Switching behavior benchmark Qc 12 nC • No reverse recovery / No forward recovery I F @ T C < 140°C 5 A • Temperature independent switching behavior I F @ T C < 100°C


    Original     		PDF IDT05S60C PG-TO220-2-2 20mA2)

    IEC60721-3-3

    Abstract: Storage of Products Supplied by Infineon Technologies sic wafer 100 mm bare die schottky diode IDT05S60
    Text: IDC05S60CE 2nd generation thinQ!TM SiC Schottky Diode A Features: Applications: •      Revolutionary Semiconductor Material Silicon Carbide Switching Behaviour Benchmark No Reverse Recovery / No Forward Recovery Temperature Independent Switching


    Original     		PDF IDC05S60CE L4724E, IEC60721-3-3 Storage of Products Supplied by Infineon Technologies sic wafer 100 mm bare die schottky diode IDT05S60

    3bs02

    Abstract: 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J
    Text: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Selection Guide www.infineon.com/powermanagement Introduction I n f i n e o n ’ s P o w e r S e mi c o n d u c t o r p h i l o s o p h y is rather


    Original     		PDF Infineo866-95 B152-H8926-G2-X-7600 NB08-1069 3bs02 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    IDC05S60C

    Abstract: IDT05S60C silicon carbide
    Text: IDC05S60C 2nd generation thinQ!TM SiC Schottky Diode FEATURES: Applications: • • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior


    Original     		PDF IDC05S60C IDC05S60C IDT05S60C silicon carbide

    PX3544

    Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
    Text: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly


    Original     		PDF lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J

    600V igbt dc to dc buck converter

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635
    Text: Infineon Product Catalog for Distribution 2008 Infineon Product Catalog for Distribution 2008 Product Catalog for Distribution Ordering No. B192-H6780-G11-X-7600 Published by Infineon Technologies AG [ www.infineon.com ] [ www.infineon.com/distribution ]


    Original     		PDF B192-H6780-G11-X-7600 SP000008186 VDSL6100i-E 600V igbt dc to dc buck converter TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635

    ICE3B0365J

    Abstract: ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP
    Text: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Pocket Guide www.infineon.com/powermanagement N-Channel MOSFETs 500V … 900V CoolMOSTM Partnumber RDS on , ID, Qg(typ)


    Original     		PDF SPP21N50C3 SPA21N50C3 SPI21N50C3 SPP16N50C3 SPA16N50C3 SPI16N50C3 SPW21N50C3 SPP12N50C3 SPA12N50C3 SPI12N50C3 ICE3B0365J ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP

    Buck-Boost Converter advantages

    Abstract: SPA11N80C3 ice1qs02 tda16846 CoolMOS Power Transistor tda4605 application note TDA4605-3 TDA16888 ICE1QS01 equivalent transistor
    Text: ICs: SMPS, CoolSET TM – Discretes: CoolMOS TM, thinQ! TM Power Management & Supply AC/DC Selection Guide www.infineon.com/power May 2006 Introduction T O D A Y ’ S M O D E R N L I F E S T Y L E leads to a fast-growing energy requirement as more and more people are able to afford electronic equipment.


    Original     		PDF B152-H8202-G4-X-7600 Buck-Boost Converter advantages SPA11N80C3 ice1qs02 tda16846 CoolMOS Power Transistor tda4605 application note TDA4605-3 TDA16888 ICE1QS01 equivalent transistor