IB0810M50 Search Results
IB0810M50 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
transistor Common Base configuration
Abstract: IB0810M50 IB0810M12 f 0952 radar circuit component transistor Common collector configuration ballast 300 watt Transistor Data Book
|
Original |
IB0810M12 IB0810M50. IB0810M12-SF-REV-NC transistor Common Base configuration IB0810M50 IB0810M12 f 0952 radar circuit component transistor Common collector configuration ballast 300 watt Transistor Data Book | |
Contextual Info: Part Number: Integra IB0810M50 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB0810M50 is designed for L-Band radar systems operating |
Original |
IB0810M50 IB0810M50 IB0810M50-REV-NC-DS-REV-A |