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Untitled Abstract: No abstract text available Text: HYM591610 Series »HYUNDAI SEMICONDUCTOR 16M X 9-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM591610 is a 16M x 9-bit Fast page mode CMOS DRAM module consisting ol nine HY5117100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22\|iF decoupling capacitor is mounted for	OCR Scan	PDF	HYM591610 HY5117100 HYM59161OM/LM/TM/LTM HYM591610M/LM HYM591610TM/LTM 1BDO4-O0-MAY93 HYM591610M
Untitled Abstract: No abstract text available Text: HYUNDAI HYM591610 M-Series 16M X 9-bit C M O S DRAM MODULE DESCRIPTION The HYM591610 is a 16M x 9-bit Fast page mode CMO S DRAM module consisting of nine HY5117100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22//F decoupling capacitor is mounted for	OCR Scan	PDF	HYM591610 HY5117100 22//F HYM59161OM/LM/TM/LTM 03IMIN. HYM591610TM/LTM 781MIN. 031MIN. 1BD04-11-MAR94
Untitled Abstract: No abstract text available Text: HYUNDAI H Y M 5 9 1 6 1 0 SEMICONDUCTOR 16M X S e r ie s 9-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM591610 is a 16M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY5117100 in 24/28 pin SOJ or TSOF-II on a 30 pin glass-epoxy printed circuit board. 0.22pF decoupling capacitor is mounted for	OCR Scan	PDF	HYM591610 HY5117100 HYM591610M/LM/TM/LTM HYM591610M/LM HYMS91610TM/LTM 1BD04-00-MAY93 HYM591610M HYM591610LM HYM591610TM
Untitled Abstract: No abstract text available Text: •HYUNDAI HYM591000B M-Series 1M x9-bit CMOS DRAM MODULE DESCRIPTION The HYM591000B is a 1M x 9-bit Fast page mode CMOS DRAM module consisting of two HY514400A and one HY531000A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22/uF decoupling capacitor is	OCR Scan	PDF	HYM591000B HY514400A HY531000A 22/uF HYM591000BM/BLM HYM591610M/LM 031MIN. HYM591610TM/LTM 08ffi