HYM591000M Search Results

HYM591000M

Contextual Info: HY UN DA I E L E C T R O N I C S SIE D •HYUNDAI SEMICONDUCTOR • 4L>75Gfifi TS3 H H Y N K HYM591000 1MX9-Bit C MOS DRAM MODULE M 4 4 1 2 0 1 C -J A N 9 2 18 DESCRIPTION FEATURES The HYM591000M is a 1M words by 9 bits dynamic RAM module and consists of nine

HYM591000

Abstract: HY531000 HYM591000M AV93
Contextual Info: HYUNDAI SEMICONDUCTOR HYM591000 Series 1M x 9-bit CMOS DRAM MODULE DESCRIPTION The HYM591000 is a 1M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY531000 in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor is mounted for each DRAM.

HYM591

Abstract: HY531000J
Contextual Info: HYUNDAI 3 TE ELECTRONICS D • 4 b 7 S 0 fifl 0 0 0 0 3 *1 0 S «HYN K P ^ '^ V 'O m m M431201A-APR91 DESCRIPTION FEATURES The HYM591000 is a 1M words by 9 bits dy­ namic RAM module and consists of nine HY531000J Fast Page mode CMOS DRAM in 20/26 pin SOJ package mounted on a 30 pin

Contextual Info: Hyundai SEM IC O N D U C TO R HYM591000 im x9-bíí cmos dram module M431201A-APR91 DESCRIPTION FEATURES The HYM591000 is a 1M words by 9 bits dy­ namic RAM module and consists of nine HY531000J Fast Page mode CMOS DRAM in 20/26 pin SOJ package mounted on a 30 pin

HYM591000

Contextual Info: HYUNDAI SEMICONDUCTOR HYM591000 Series 1M X 9-bit CMOS DRAM MODULE DESCRIPTION The HYM591000 is a 1M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY531000 in 20/26 pin SOJ on a 30 pin giass-epoxy printed circuit board. 0.22/j F decoupling capacitor is mounted for each DRAM.