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    HY6116A Price and Stock

    SK Hynix Inc HY6116AP-12

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics HY6116AP-12 502
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    Quest Components HY6116AP-12 24
    • 1 $14.79
    • 10 $9.86
    • 100 $9.86
    • 1000 $9.86
    • 10000 $9.86
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    HY6116AP-12 3
    • 1 $14.79
    • 10 $10.846
    • 100 $10.846
    • 1000 $10.846
    • 10000 $10.846
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    HY6116AP-12 1
    • 1 $14.79
    • 10 $9.86
    • 100 $9.86
    • 1000 $9.86
    • 10000 $9.86
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    SK Hynix Inc HY6116ALP-15

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics HY6116ALP-15 53 1
    • 1 $23.4
    • 10 $23.4
    • 100 $21.5982
    • 1000 $21.5982
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    Quest Components HY6116ALP-15 29
    • 1 $25.35
    • 10 $25.35
    • 100 $24.375
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    HY6116ALP-15 13
    • 1 $12.5106
    • 10 $8.3404
    • 100 $8.3404
    • 1000 $8.3404
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    SK Hynix Inc HY6116AP-15

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    Bristol Electronics HY6116AP-15 27
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    Quest Components HY6116AP-15 28
    • 1 $15
    • 10 $10
    • 100 $9.25
    • 1000 $9.25
    • 10000 $9.25
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    HY6116AP-15 13
    • 1 $15
    • 10 $7.5
    • 100 $7.5
    • 1000 $7.5
    • 10000 $7.5
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    SK Hynix Inc HY6116AP-10

    IC,SRAM,2KX8,CMOS,DIP,24PIN,PLASTIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components HY6116AP-10 28
    • 1 $15
    • 10 $10
    • 100 $9.25
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    HY6116AP-10 25
    • 1 $15
    • 10 $10
    • 100 $9.25
    • 1000 $9.25
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    HY6116AP-10 12
    • 1 $15
    • 10 $10
    • 100 $10
    • 1000 $10
    • 10000 $10
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    SK Hynix Inc HY6116ALP-10

    STANDARD SRAM, 2KX8, 100NS, CMOS, PDIP24
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components HY6116ALP-10 7
    • 1 $9
    • 10 $6.6
    • 100 $6.6
    • 1000 $6.6
    • 10000 $6.6
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    HY6116A Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HY6116A Hynix Semiconductor 2048 x 8 Bit CMOS Static SRAM Scan PDF
    HY6116A-10 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    HY6116A-12 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    HY6116A-15 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    HY6116AL-10 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    HY6116AL-12 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    HY6116AL-15 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    HY6116ALP Unknown 2K x 8-bit CMOS SRAM Scan PDF
    HY6116AP Unknown 2K x 8-bit CMOS SRAM Scan PDF

    HY6116A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: HY6116A .V« *H Y UNDAI SEMICONDUCTOR M211201B-APR91 FEATURES DESCRIPTION The HY6116A is a high speed, low power, 2,048 words by 8-bit CM O S static RAM fabri­ cated using high performance CM OS process technology. This high reliability process cou­ pled with innovative circuit design techniques,


    OCR Scan
    PDF HY6116A M211201B-APR91 HY6116A

    HY6116ALP 10

    Abstract: HY6116ALP HY6116A HY6116AP HY6116
    Text: •HYUNDAI HY6116A Series SEMICONDUCTOR 2 K x 8-bit c m o s s r a m DESCRIPTION The HY6116A is a high-speed, low power 2,048 x 8-bits CMOS static RAM fabricated using high performance CMOS process technology. This high reliability process coupled with innovative circuit design techniques, yields


    OCR Scan
    PDF HY6116A -85/100/120/150ns 10A01 -10-MAY93 1DA01-10-MAY93 HY6116ALP 10 HY6116ALP HY6116AP HY6116

    HY6116ALP 10

    Abstract: hyundai HY6116ALP
    Text: HY6116A Series »HYUNDAI 2Kx 8-bit CMOS SRAM DESCRIPTION The HY6116A is a high-speed, low power and 2,048 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan
    PDF HY6116A HY6116A HY6116Ahas speed-85/100/120/150ns 1DA01-11-MAY94 HL750Ã 0003bl7 55fX13 HY6116ALP 10 hyundai HY6116ALP

    HY6116A-10

    Abstract: HY6116A
    Text: D HY UN DA I E L E C T R O N I C S • 4b7S0flfl Q Q D Q 4 Q T b ■ HYNK M211201B-APR91 DESCRIPTION FEATURES The HY6116A is a high speed, low power, 2,048 words by 8-bit CM O S static RAM fabri­ cated using high performance CM OS process technology. This high reliability process cou­


    OCR Scan
    PDF M211201B-APR91 HY6116A 500mV OQGG414 T-46-23-12 HY6116A-10

    HY6116ALP

    Abstract: HY6116ALP 10 HY6116AP HY6116A hy6116 cmos series
    Text: HY6116A S e rie s «HYUNDAI 2Kx 8-bit CMOS SRAM DESCRIPTION The HY6116A is a high-speed, low power and 2,048 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan
    PDF HY6116A HY6116Ahas speed-85/100/120/150ns 1DA01 -11-MAY94 00D3bl7 1DA01-11-MAY94 HY6116ALP HY6116ALP 10 HY6116AP hy6116 cmos series

    HY6116A-10

    Abstract: HY6116A
    Text: •HYUNDAI HY6116A SEMICONDUCTOR 2KX 8-Bit CMOS SRAM M211201A-MAV92 DESCRIPTION FEATURES The HY6116A is a high speed, low power, 2,048 words by 8-bit C M O S static RAM fabri­ cated using high perform ance CM OS process technology. This high reliability process cou­


    OCR Scan
    PDF HY6116A HY6116A M211201A-MAV92 speed-85/100/120/150ns HY6116A-10

    HY6116

    Abstract: HY6116A HY6116AL-10 HY61C16A-45 HY61C16A-55 HY61C16AL-25 HY61C16AL-35 HY61C16AL-45 HY61C16AL-55 HY61C16L-45
    Text: -51 16K X m % íi £ CC TAAC max ns) TCAC max (ns) 4 TOE max (ns) CMOS •■< + > TOH min (ns) TOD max (ns) ? S t a t i c RAM ( 2 0 4 8 x 8 ) ft tt € T»P min (ns) TDS min (ns) TDH min (ns) TWD min (ns) TWR max (ns) V D D or V C C (V) 2 4 P I N A m I DD


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    PDF 2048x8) HY61C16A-45 HY61C16A-55 HYB1C1BA-70 HY61C16A30 IDT6U6SA15 1DT6116SA20 IDTB116SA25 IDT6UGLA15 IDT6116LA20 HY6116 HY6116A HY6116AL-10 HY61C16AL-25 HY61C16AL-35 HY61C16AL-45 HY61C16AL-55 HY61C16L-45

    Untitled

    Abstract: No abstract text available
    Text: H Y 2 K6x 81- B it1C M6OA /L S Static R A M ▲ £ £ £ £ £ ! DESCRIPTION FEATURES T h e H Y 6 1 1 6 A / L is a h igh speed, low power, 2,048-w ord by 8-bit C M O S static R A M fa b r i­ c a te d using h ig h - p e r f o r m a n c e C M O S process technology. This high reliability process co u p le d


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    PDF 048-w

    B511D

    Abstract: No abstract text available
    Text: HY5115A Series -HYUNDAI 2K N B-bit CM 0 5 5 RAM DESCRIPTION The HY5115A is a high-speed, law pow er and 2,D48 i B-bits CMOS sia lic RAM fabricated using Hyundai's high perform ance tw in tub CMOS process technology. This high reliability process coupled w ilh innovative circuit


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    PDF HY5115A HY611 HY511 speed-B5/100/120/150ns 1DAD1-11-MAYB4 HYB11BAP B511D

    hyundai

    Abstract: 256k x8 SRAM 5V 16MX8
    Text: PART NUMBER ♦HYUNDAI HY XX X X XX XXX X XX XX - XX X T SPEED HYUNDAI_ I HY : Memory Products PRODUCT GROUP 62 : Slow SRAM* 63 : Fast SRAM 67 : Sync. SRAM POWER SUPPLY_ BLANK : 5.0V V : 3.3V/3.0V PROCESS_ BLANK : CMOS B : BiCMOS


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    PDF 120ns 150ns x8/x16) 11-MAY95 100ns hyundai 256k x8 SRAM 5V 16MX8