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    Untitled

    Abstract: No abstract text available
    Text: HUF4410DY S E M I C O N D U C T O R ADVANCE INFORMATION 10A, 30V, 0.0135 Ohm, N-Channel, Logic Level Power MOSFET December 1997 Features Description • Logic Level Gate Drive This power MOSFET is manufactured using an innovative process. This advanced process technology achieves the


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    HUF4410DY PDF

    Untitled

    Abstract: No abstract text available
    Text: HUF4410DY HARRIS S E M I C O N D U C T O R ADVANCE INFORMATION 10A, 30V, 0.0135 Ohm, N-Channel, Logic Level Power MOSFET December 1997 Features Description • Logic Level Gate Drive This power MOSFET is manufactured using an innovative process. This advanced process technology achieves the


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    HUF4410DY 00A/HS PDF

    ns802

    Abstract: No abstract text available
    Text: HUF4410DY HARRIS S E M I C O N D U C T O R ADVANCE INFORMATION 10A, 30V, 0.0135 Ohm, N-Channel, Logic Level Power MOSFET December 1997 Features Description • Logic Level Gate Drive This power MOSFET is manufactured using an innovative process. This advanced process technology achieves the


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    HUF4410DY ns802 PDF

    20KSl

    Abstract: 44681
    Text: a HUF4410DY HARRIS S E M I C O N D U C T O R ADVANCE INFORMATION 10A, 30V, 0.0135 Ohm, N-Channel, Logic Level Power MOSFET December 1997 Features Description • Logic Level Gate Drive This power MOSFET is m anufactured using an innovative process. This advanced process technology achieves the


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    HUF4410DY 020S2 TB334, 00A/H 20KSl 44681 PDF